Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions

Yin, Xue-Bing; Tan, Zhiqiang; Yang, Rui; Guo, Xin

doi:10.1007/s10832-017-0083-0

Cited by 16 publications

(24 citation statements)

References 116 publications

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“…Strontium titanate (SrTiO 3 , STO), with a typical perovskite structure, has a wide optical bandgap of 3.2 eV, high dielectric constant, low dielectric loss, and good thermal stability. Therefore, STO has attracted growing attention in recent years for the applications in the fields of electronics, machinery, and functional ceramics . Furthermore, STO has a high photocatalytic activity, unique electromagnetic properties and redox activity, and therefore widely used in photocatalysis, water splitting, and fuel cells .…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, STO has attracted growing attention in recent years for the applications in the fields of electronics, machinery, and functional ceramics. [24][25][26][27][28] Furthermore, STO has a high photocatalytic activity, unique electromagnetic properties and redox activity, and therefore widely used in photocatalysis, water splitting, and fuel cells. [29][30][31] In addition, STO crystal film is a very attractive substrate for the growth of various oxide thin films and heterointerfaces.…”

Section: Introductionmentioning

confidence: 99%

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Tunable self‐powered n‐SrTiO₃ photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)

Zhang

Fang

2019

InfoMat

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The heterojunction photodetector between n‐SrTiO3 (n‐STO) and p‐CuS‐ZnS (p‐CZS) is prepared by a simple chemical bath deposition. The p‐CZS/n‐STO photodetector exhibits excellent self‐powered characteristics under 390‐nm light illumination, including high photosensitivity (on/off ratio of 300), fast response speed (0.7/94.6 ms), and good wavelength selectivity (410‐380 nm). More importantly, the self‐powered n‐STO photodetectors can be regulated by varying the composition of CZS film (p‐CZS, p‐CuS, and n‐ZnS). All devices exhibit a large open‐circuit voltage and show different self‐powered behaviors because of the different built‐in electric fields. The open‐circuit voltages of the CZS/STO, CuS/STO, and ZnS/STO devices are measured to be 0.56, 0.30, and 0.35 V, respectively. This work provides a simple and effective way to fabricate tunable self‐powered photodetectors by varying the composition of the nanocomposite film.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Tunable self‐powered n‐SrTiO₃ photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)

Zhang

Fang

2019

InfoMat

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“…Kubicek, Taibl, Navickas, Hutter, Fafilek and Fleig investigate and review bias effects and mechanisms at high and low temperature for strontium titanate perovskites [13]. Yang and the Guo team explore how strontium titanate can be employed as resistive switch to emulate neurological and psychological functions [14]. Raeis-Hosseini and Lee review resistive switching memories using biomaterials based on flexible nanoelectronics [15].…”

Section: Emulation Of Neural Network By Redox-based Resistivementioning

confidence: 99%

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

2017

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Emulation of neural networks by redox-based ResistiveRandom Access Memories (ReRAMs) with components such as thin films of ceramic materials are considered by the technological roadmap (ITRS) as a promising concept for the next generation non-volatile memory storage and as an important key towards computation with neuromorphic algorithms. ReRAMs are regarded as conceptually new building units in modern nanoelectronics, finding application not only as a memory, but also as selectors, for logic operations and neuromorphic computing circuits beyond the von Neumann concept, being capable of bio-inspired cognitive functions, such as machine learning and pattern recognition. The information is saved in ReRAMs as particular resistances of the devices adjustable by voltage stimuli, where in the most simple case the high resistive state represents the Boolean 0 and the low resistive state -the Boolean 1. The devices show outstanding potential for scaling down to the atomic level, integration, low-power consumption, sub-nanosecond operation time range and digital and/or analog volatile and/or non-volatile information storage. In these devices, the switching relies on redox reactions and mixed ionic-electronic transport at the nanoscale, in cells/devices of the type MEM (metal-electrolytemetal) or MIM (metal-insulator-metal) where oxides and higher chalcogenides are typically used as ion conducting materials. ReRAM devices are operated at extremely harsh conditions characterized by high electric fields (up to1 0 8 V/m) and extremely high current densities in the range above MA/cm 2 and show perspective for future memory and neuromorphic computing devices.In this special issue of the Journal of Electroceramics, we present a selection of invited and contributed articles, which focus on both materials and device aspects. These papers span a wide range reviewing and proposing materials for the switching oxides, including investigation of the switching mechanism, highlighting the involved nanionic processes and highlighting novel operation principles. We are fortunate to have attracted 16 high quality and timely contributions to this issue composed of invited reviews highlighting either material, probing or device aspects on the theme of this special issue.An invited review on resistive switching devices and their applications as mixed signal analog-digital neuromorphic computing architectures and other application fields by Zidan, Chen, Indiveri and Lu leads off the special issue [1]. In this paper, the development and opportunities of memristive switching devices for replacing classic binary transistors and potential computing architectures are discussed by the authors. Resistive switches offer the intrinsic ability of ready processing in 3D memory array architectures with exciting potential for mass storage applications and handling of big data. In a joint contribution lead by Chen et al. colleagues from Stanford,

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“…The exact required device performance specifications, including switching speed and retention, strongly depend on the biological functionality that is required from the neural network [2,3,5,6]. For example, the processes of learning and forgetting in the human brain are governed by the modulation of the strengths of paths connecting neurons, known as synaptic weights, as a result of action potentials [4,7,10,11]. This synaptic plasticity behavior can be emulated by memristors [12]: two-terminal devices of which the microscopic internal state can be modified and measured as a change in the conductance.…”

Section: Introductionmentioning

confidence: 99%

“…Additionally, a lack of control over the forming process can increase device-to-device variations and reduce device performance [2,9,10,15]. In this context, interface driven memristive effects such as that found in Schottky interfaces between Nb-doped SrTiO 3 (Nb:STO) and metals, without the need of a forming process, are an important consideration [11,14,[16][17][18][19][20][21][22][23]. Recently, there has been a growing interest in understanding the rich and intricate properties of complex oxide interfaces and their application in superconductivity, magnetism and multiferroics [24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3

Goossens

Das

Banerjee

2018

Journal of Applied Physics

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Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to emulate the forgetting process of the brain. A charge trapping model is proposed to explain the switching behavior.

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Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions

Cited by 16 publications

References 116 publications

Tunable self‐powered n‐SrTiO₃ photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)

Tunable self‐powered n‐SrTiO₃ photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3

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Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions

Cited by 16 publications

References 116 publications

Tunable self‐powered n‐SrTiO3 photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)

Tunable self‐powered n‐SrTiO3 photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3

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Tunable self‐powered n‐SrTiO₃ photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)

Tunable self‐powered n‐SrTiO₃ photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)