Single-Crystalline Thin-Film Memory Arrays of Molecular Ferroelectrics with Ultralow Operation Voltages

Abstract

Though most of the recently developed molecular ferroelectrics (MFs) exhibit excellent ferroelectric properties, the practical applications are still impeded by the limited polarization axes, poor processing capability for a high-quality thin film, and the incompatibility with matured lithography techniques for microelectronics. Here, we successfully demonstrated MF-based single-crystalline microdevice arrays using a lithography-compatible, solution-processed strategy that can avoid the above-mentioned obstacles at one time, i.e., dewetting-assisted patterning crystallization strategy. As a protype, uniform and well-aligned single-crystalline thin-film arrays of multiaxial MF [3-oxoquinuclidinium]­ClO4 ([3-O-Q]­ClO4) are prepared. Owing to the well-aligned crystallographic orientation and polarization direction, the obtained single-crystalline nonvolatile memory (NVM) arrays can exhibit an ultralow operating voltage of ∼1.6 V and long endurance cycles of 106, which are superior to other organic NVM devices. This work implies a promising route to high-density single-crystalline memory arrays for data storage, especially for low-cost flexible electronics.

Reliable ferroelectricity in sol–gel‐derived BiFeO3 thin films below 200 nm

“…In recent decades, ferroelectric thin‐film materials with perovskite structures have received extensive attention from researchers due to their promising applications in novel data memory, 1,2 sensors, 3 and electronic devices 4–7 . Among ferroelectric thin‐film materials, bismuth ferrite BiFeO 3 (BFO is attractive due to its high remanent polarization (∼100 μC·cm −2 ), 8 but several problems prevent BFO thin films from being used in practical applications.…”

Large‐Area Flexible Memory Arrays of Oriented Molecular Ferroelectric Single Crystals with Nearly Saturated Polarization

“…[ 29,30 ] For memory and integrated electronics, high‐density MFSC arrays should be adopted. However, MFSC arrays have rarely been demonstrated, [ 31,32 ] and uniform scalable single‐crystalline MF memory arrays are still difficult to be achieved. Especially, the capability of flexibility for the MFSC arrays, as a merit function for organic electronics, has not been verified owing to the brittle MF crystalline films.…”

Enhanced dielectric/ferroelectric properties of P(VDF-TrFE) composite films with organic perovskite ferroelectrics

“…21) For instance, the MDABCO-NH 4 I 3 crystal possesses a large P s of 22.0 μC cm −2 with E c only in the range of 6.0-12.0 kV cm − . 22) In spite of excellent ferroelectricity, the emergent molecular ferroelectrics (MFs) are currently hard to be made into highquality thin films with out-of-plane ferroelectric polarization, 23,24) which is in contrast to the case of P (VDF-TrFE). Doping molecular ferroelectric materials into polymer ferroelectrics could be an effective solution to combine the advantages of each material.…”