Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates

Abstract

High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer Appl. Phys. Lett. 86, 012109 (2005); 10.1063/1.1844034Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy

Effect of polycrystallinity on the optical properties of highly oriented ZnO grown by pulsed laser deposition

“…Significant electric field effects (due to charge trapping at the grain boundaries) are seen. The grain sizes (parallel to the growth direction) determined from x-ray measurements are given in table I. AFM measurements 6 of lateral grain size confirm the x-ray results and also clearly show the increase in grain size with anneal. The surface roughness (taken as the standard deviation of the AFM tip height across a 2 µm profile) of the samples was also seen to decrease with increasing grain size from a value of > 10 nm down to ~ 3 nm for the sample annealed at 500 0 C. Figure 1 shows PL spectra at 20 K and 300 K for the three PLD grown samples.…”

“…This technique has been previously shown to produce high quality ZnO thin films, with excellent electronic and optical properties [6,7]. The samples were annealed in situ at different temperatures immediately after deposition.…”

The Characteristics of Amorphous-Oxide-Semiconductor Thin-Film-Transistors According to the Active-Layer Structure

“…The band gap (EC-EV) was 3.4 eV [16], the electron affinity was 4.29 eV [17], the dielectric constant was 8.12 [18], and the donor level was 0.03 eV [17]. NTA, wTA, NGA, …”

Optical properties of ZnO-based quantum structures

“…The crystal structure and a possible hetero-interface with ZnO are schematically shown in Ref. [12]. Although there is now a fairly good understanding of the basic properties of ZnO epilayers [13,14,15], it is only recently that the basic properties of its QWs have been studied in detail [16].…”