Single-electron charging in nanocrystalline silicon point-contacts

Durrani, Z. A. K.; Kamiya, Toshio; Tan, Y. T.; Ahmed, H.; Lloyd, N. S.

doi:10.1016/s0167-9317(02)00602-0

Cited by 12 publications

(5 citation statements)

References 11 publications

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“…3(b) [19]. The oscillation with an unchanged period persists up to room temperature although the P/V current ratio is gradually decreased as the temperature increases as shown in the inset to Fig.…”

Section: Materials Optimisation Towards Room-temperature Nanosilicon Smentioning

confidence: 85%

Nanosilicon for single-electron devices

Mizuta

Furuta

Kamiya

et al. 2004

Current Applied Physics

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This paper presents a brief overview of the physics of nanosilicon materials for single-electron device applications. We study how a nanosilicon grain and a discrete grain boundary work as a charging island and a tunnel barrier by using a point-contact transistor, which features an extremely short and narrow channel. Single-electron charging phenomena are investigated by comparing asprepared devices and various oxidized devices. The optimization of grain and grain-boundary structural parameters is discussed for improving the Coulomb blockade characteristics and realizing room temperature device operation.

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Section: Materials Optimisation Towards Room-temperature Nanosilicon Smentioning

confidence: 85%

Nanosilicon for single-electron devices

Mizuta

Furuta

Kamiya

et al. 2004

Current Applied Physics

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“…Selective oxidation of the GBs from amorphous silicon into SiO x may be used to raise the operating temperature of point-contact SETs to room temperature [53,105,106]. Oxidation at 750 o C, followed by high-temperature annealing at 1000 o C, selectively oxidises the GBs, raising the GB potential barrier height to ~170 meV ~7k B T at room temperature [53].…”

Section: Single-electron Effects In Nanocrystalline Silicon Filmsmentioning

confidence: 99%

Electronic transport in silicon nanocrystals and nanochains

Durrani

Rafiq

2009

Microelectronic Engineering

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“…As W is increased, this value decreases gradually, resulting in a lower tunnel barrier at the center of the channel. [30]. A clear CB oscillation is seen in Fig.…”

Section: Ep Epmentioning

confidence: 73%

Single-Electron Charging Phenomena in Nano/Polycrystalline Silicon Point Contact Transistors

Mizuta

Furuta²,

Kamiya³

et al. 2003

SSP

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Abstract. This paper gives a review of our recent work investigating the physics of single-electron charging phenomena in nano/polycrystalline silicon nanostructures. We first provide a short overview on the research of silicon-based single-electron devices from the last decade. Various single-electron transistor structures are compared in terms of control of electron islands and tunnel barriers. We then study the single-electron charging phenomena in nano/polycrystalline silicon nanostructures. A novel point-contact transistor is introduced, which features an extremely short and narrow nano/poly-Si nanowire as the transistor's channel. This structure is suitable for studying how a grain smaller than 10 nm in size and a discrete grain boundary work as a charging island and a tunnel barrier, respectively. The relationships between structural and electrical parameters of grains/grain-boundaries and the resulting Coulomb blockade characteristics for the point contact transistors are investigated by applying various passivation processes. Finally, optimisation of grain and grain-boundary structures is discussed for improving the Coulomb blockade characteristics and realizing nano/poly-Si single-electron transistors operating at room temperature.

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Single-electron charging in nanocrystalline silicon point-contacts

Cited by 12 publications

References 11 publications

Nanosilicon for single-electron devices

Nanosilicon for single-electron devices

Electronic transport in silicon nanocrystals and nanochains

Single-Electron Charging Phenomena in Nano/Polycrystalline Silicon Point Contact Transistors

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