Single-electron routing in a silicon quantum-dot array

Utsugi, Takeru; Kuno, Takuma; Lee, Noriyuki; Tsuchiya, Ryuta; Mine, Toshiyuki; Hisamoto, Digh; Saito, Shinichi; Mizuno, Hiroyuki

doi:10.1103/physrevb.108.235308

Phys. Rev. B

2023

DOI: 10.1103/physrevb.108.235308

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Single-electron routing in a silicon quantum-dot array

Takeru Utsugi,

Takuma Kuno,

Noriyuki Lee

et al.

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Cited by 3 publications

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Leveraging off-the-shelf silicon chips for quantum computing

Michniewicz,

Kim

2024

Applied Physics Letters

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There is a growing demand for quantum computing across various sectors, including finance, materials, and studying chemical reactions. A promising implementation involves semiconductor qubits utilizing quantum dots within transistors. While academic research labs currently produce their own devices, scaling this process is challenging, requires expertise, and results in devices of varying quality. Some initiatives are exploring the use of commercial transistors, offering scalability, improved quality, affordability, and accessibility for researchers. This paper delves into potential realizations and the feasibility of employing off-the-shelf commercial devices for qubits. It addresses challenges such as noise, coherence, limited customizability in large industrial fabs, and scalability issues. The exploration includes discussions on potential manufacturing approaches for early versions of small qubit chips. The use of state-of-the-art transistors as hosts for quantum dots, incorporating readout techniques based on charge sensing or reflectometry, and methods like electron shuttling for qubit connectivity are examined. Additionally, more advanced designs, including 2D arrays and crossbar or DRAM-like access arrays, are considered for the path toward accessible quantum computing.

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Leveraging off-the-shelf silicon chips for quantum computing

Michniewicz,

Kim

2024

Applied Physics Letters

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Extended Hubbard model describing small multidot arrays in bilayer graphene

Knothe,

Burkard

2024

Phys. Rev. B

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Properties of Indium Antimonide Nanocrystals as Nanoelectronic Elements

Nikolai Dmitrievich

2023

IgMin Res

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By measurements on single nanocrystals of indium antimonide in the interelectrode nanogap of a scanning probe microscope, current-voltage characteristics with quasiperiodic current pulsations, are explained in the model of Bloch oscillations in a perfect nanocrystal, and individual sharp peaks - conductivity resonances, explained in the model of quantum-size limitation of the wave process of electron transport in a deep potential hole. The mutual influence of radiation from two statistical ensembles of nanocrystals from the same batch was experimentally studied and established. It is assumed that this radiation is entangled photons. It is proposed to use nanocrystals in nanoelectronics as a single-electron memristor, a single-photon bolometer, and a source of microwave radiation.

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Single-electron routing in a silicon quantum-dot array

Cited by 3 publications

References 60 publications

Leveraging off-the-shelf silicon chips for quantum computing

Leveraging off-the-shelf silicon chips for quantum computing

Extended Hubbard model describing small multidot arrays in bilayer graphene

Properties of Indium Antimonide Nanocrystals as Nanoelectronic Elements

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