Single electron transistor: energy-level broadening effect and thermionic contribution

Abstract

In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si−QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy−level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I−V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined.