Single-electron winner-take-all network

A Modified Nanoelectronic Winner-Take-All Circuit for Room Temperature Operation

“…The bias voltage V bias has a fixed value. 12 Capacitor C t is responsible for the output convergence time of the circuit.…”

“…The same application was previously simulated in Ref. [12]. The whole system is shown in Four exemplar dot patterns, illustrated in Figure 4, were chosen.…”

“…This layer calculates the similarity from the input pattern to each one of the exemplar patterns. 12 The values provided by this layer were presented to SIMON 18 which was used for simulating the SET-WTA layer. In order to achieve compatibility with the SET-WTA layer, which receives current as its primary input, a value 1 in the bipolar vector corresponded to a 1 5 pA input current and value −1 corresponded to a −1 5 pA input current.…”

“…5 Although single-electron devices operating at room temperature have already been built, [6][7][8][9] it is still a challenge to propose, simulate and build more complex single-electron circuits operating properly at 300 K. 10,11 For example, a SET-WTA circuit has already been proposed. [12][13][14] This circuit was simulated for static inputs and was robust against effects such as offset charges. It was able to operate at temperatures up to 77 K.…”

Signal Classifier Based on a Single-Electron Stochastic Associative Memory

“…A circuit with 400 tunnel junctions would take weeks to be totally edited with that system. A netlist description of SET circuits can be made in SIMON, but it is also time consuming, tedious and prone to mistakes [11];…”