TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference 2009
DOI: 10.1109/sensor.2009.5285930
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Single element 3-terminal pressure sensors: A new approach to pressure sensing and its comparison to the half bridge sensors

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Cited by 5 publications
(9 citation statements)
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“…IoT sensors that perceive and collect information and circuits that readout these sensors with high precision are also becoming more important [2]. Resistive micro-electro-mechanical systems (MEMS) sensors that use a piezoresistive effect have various ways, such as strain gauges and pressure, acceleration, and force sensors [3][4][5][6][7]. The need for smaller, less expensive high-performance sensors has developed in a way that makes sensors and sensing elements smaller.…”
Section: Introductionmentioning
confidence: 99%
“…IoT sensors that perceive and collect information and circuits that readout these sensors with high precision are also becoming more important [2]. Resistive micro-electro-mechanical systems (MEMS) sensors that use a piezoresistive effect have various ways, such as strain gauges and pressure, acceleration, and force sensors [3][4][5][6][7]. The need for smaller, less expensive high-performance sensors has developed in a way that makes sensors and sensing elements smaller.…”
Section: Introductionmentioning
confidence: 99%
“…Mikro-tip 2 pressure catheters and SMI 3 pressure catheters are a couple of commercially available 1 Fr pressure catheters. Several researchers have reported sensor designs for miniature catheter application by deploying different piezoresistors, membrane structures and signal conditioning circuits [15][16][17][18][19][20]. For instance, Patil et al [15] and Kalvesten et al [16] have reported polysilicon-based piezoresistive pressure sensors using quarter-active Wheatstone bridge (QWB) and half-active Wheatstone bridge (HWB) readout circuits, respectively, for 1 Fr catheter application.…”
Section: Introductionmentioning
confidence: 99%
“…For instance, Patil et al [15] and Kalvesten et al [16] have reported polysilicon-based piezoresistive pressure sensors using quarter-active Wheatstone bridge (QWB) and half-active Wheatstone bridge (HWB) readout circuits, respectively, for 1 Fr catheter application. For less than 1 Fr catheter application, Melvas et al [17] and Usha et al [18] have reported piezoresistive pressure sensors using polysilicon and p-type single-crystal silicon materials, respectively, using HWB circuit. In the device reported by Melvas et al [17], complex structures such as leverage beams were used to improve the performance of miniature pressure sensors; however, this increased the fabrication cost with more process steps and decreased the yield.…”
Section: Introductionmentioning
confidence: 99%
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“…Currently mechanical sensors based on piezoresistive [3], capacitive [4], resonant [5], and optical fiber [6,7] sensing modes were created to convert strain/stress changes to an electrical signal. Such types of sensors are widely used in aerospace, marine exploration, medical diagnostics, and biochemical fields [8][9][10].…”
Section: Introductionmentioning
confidence: 99%