Single event burnout failures caused in silicon carbide power devices by alpha particles emitted from radionuclides

Pocaterra, Marco; Ciappa, Mauro

doi:10.1016/j.prime.2023.100203

Cited by 1 publication

(1 citation statement)

References 45 publications

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“…Shoji et al [22] was one of the first to propose a failure mechanism opposing the conventional ideas previously documented for the SiC MOSFET. The similar failure characteristics between the SiC JBS (does not have parasitic BJT) and SiC MOSFET (does have parasitic BJT) support the claims made, and since then many studies have supported [8,[23][24][25][26] and refuted the parasitic BJT [20,22,[27][28][29][30][31] as the regenerative failure mechanism responsible for SEB in SiC MOSFET.…”

Section: Motivation and Objectivementioning

confidence: 56%

A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs

Grome,

2024

Electronics

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Radiation hardening of power MOSFETs (metal oxide semiconductor field effect transistors) is of the highest priority for sustaining high-power systems in the space radiation environment. Silicon carbide (SiC)-based power electronics are being investigated as a strong alternative for high power spaceborne power electronic systems. SiC MOSFETs have been shown to be most prone to single-event burnout (SEB) from space radiation. The current knowledge of SiC MOSFET device degradation and failure mechanisms are reviewed in this paper. Additionally, the viability of radiation tolerant SiC MOSFET designs and the modeling methods of SEB phenomena are evaluated. A merit system is proposed to consider the performance of radiation tolerance and nominal electrical performance. Criteria needed for high-fidelity SEB simulations are also reviewed. This paper stands as a necessary analytical review to intercede the development of radiation-hardened power devices for space and extreme environment applications.

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Section: Motivation and Objectivementioning

confidence: 56%

A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs

Grome,

2024

Electronics

View full text Add to dashboard Cite

show abstract

Single event burnout failures caused in silicon carbide power devices by alpha particles emitted from radionuclides

Cited by 1 publication

References 45 publications

A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs

A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs

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