Single Event Burnout Hardening Technique for High-Voltage p-i-n Diodes With Field Limiting Rings Termination Structure

Liao, Xinfang; Liu, Yi; Xu, Chang-Qing; Li, Jing; Yang, Yong

doi:10.1109/ted.2021.3137135

Cited by 13 publications

(2 citation statements)

References 44 publications

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“…It can be concluded that x 0 = 40 μm is the most sensitive incident position with the lowest V th,SEB of 164 V. Therefore, x 0 = 40 μm is selected as the default incident position in our following simulations so as to obtain the worst case for SEB. In addition, it should also be pointed out that we regard the SEB failure criterion as the maximum lattice temperature of the device after the ion strike reaches the melting point of silicon (1688 K) [ 9 , 20 ].…”

Section: Resultsmentioning

confidence: 99%

Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs

Wang,

Liu,

et al. 2023

Micromachines

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Power MOSFETs are found to be very vulnerable to single-event burnout (SEB) in space irradiation environments, and the military components generally require that devices could operate reliably as the temperature varies from 218 K to 423 K (−55 °C to 150 °C); thus, the temperature dependence of single-event burnout (SEB) in power MOSFETs should be investigated. Our simulation results showed that the Si power MOSFETs are more tolerant to SEB at a higher temperature at the lower LET (10 MeV∙cm2/mg) due to the decrease of the impact ionization rate, which is in good agreement with the previous research. However, the state of the parasitic BJT plays a primary role in the SEB failure mechanism when the LET value is greater than 40 MeV∙cm2/mg, which exhibits a completely different temperature dependence from that of 10 MeV∙cm2/mg. Results indicate that with the temperature increasing, the lower difficulty to turn on the parasitic BJT and the increasing current gain all make it easier to build up the regenerative feedback process responsible for SEB failure. As a result, the SEB susceptibility of power MOSFETs increases as ambient temperature increases when the LET value is greater than 40 MeV∙cm2/mg.

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Section: Resultsmentioning

confidence: 99%

Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs

Wang,

Liu,

et al. 2023

Micromachines

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“…LCLC has been widely accepted as an effective heavy-ion irradiation hardening method for electronic devices [31][32][33][34]. The method of LCLC is to control the local recombination rate by introducing the additional recombination centers within the structure.…”

Section: Analysis Of Lclc Hardening Mechanism In Ga 2 O 3 Finfetmentioning

confidence: 99%

Research of single-event burnout in vertical Ga₂O₃ FinFET by low carrier lifetime control

Bao,

Yu,

Zhao

et al. 2024

Semicond. Sci. Technol.

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This paper presents the 2-D simulations of single-event burnout (SEB) in vertical enhancement-mode gallium oxide (Ga2O3) fin-shaped channels field-effect transistor (FinFET) by low carrier lifetime control (LCLC) method. The correctness of the structure parameters and simulated physical models are verified by the basic electrical characteristics in experiments. The SEB simulations show that the most sensitive region to heavy ion is the narrow channel region. The SEB failure is due to the diffusion of a large number of electron-hole pairs induced by heavy ion into a strong electric field region, resulting in a large transient current density to cause the thermal failure. Afterwards, the influences of the narrow channel region width on basic characteristics and SEB performance are discussed. Then, the SEB hardening mechanism of LCLC is studied that the electric field peak in the top of the structure can be effectively reduced, and the transient current caused by second avalanche is restrained. In addition, the basic characteristics with LCLC are proved to be hardly influenced in Ga2O3 FinFET. Finally, the carrier lifetime value and local control region are studied that the SEB hardening performance can be significantly improved by a large enough control area with a low carrier lifetime.

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Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric

et al. 2023

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Single Event Burnout Hardening Technique for High-Voltage p-i-n Diodes With Field Limiting Rings Termination Structure

Cited by 13 publications

References 44 publications

Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs

Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs

Research of single-event burnout in vertical Ga₂O₃ FinFET by low carrier lifetime control

Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric

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Single Event Burnout Hardening Technique for High-Voltage p-i-n Diodes With Field Limiting Rings Termination Structure

Cited by 13 publications

References 44 publications

Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs

Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs

Research of single-event burnout in vertical Ga2O3 FinFET by low carrier lifetime control

Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric

Contact Info

Product

Resources

About

Research of single-event burnout in vertical Ga₂O₃ FinFET by low carrier lifetime control