Single-Event Effects in Power MOSFETs During Heavy Ion Irradiations Performed After Gamma-Ray Degradation

Busatto, G.; Luca, Valentina De; Iannuzzo, Francesco; Sanseverino, Annunziata; Velardi, Francesco

doi:10.1109/tns.2013.2278038

Cited by 7 publications

(2 citation statements)

References 22 publications

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“…[17] However, they are more sensitive to SEE. [24][25][26] To date, there are almost no investigations on how SEGR effects are affected by the foregoing TID damage in SiC MOSFET power devices, especially the intrinsic causes and microscopic mechanisms have not been revealed.…”

Section: Introductionmentioning

confidence: 99%

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

et al. 2023

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The synergistic effect of total ionizing dose (TID) and single event gate rupture (SEGR) in SiC power MOSFETs was investigated via simulation. The device was found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism was revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.

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Section: Introductionmentioning

confidence: 99%

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

et al. 2023

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“…At present time, there is an insignificant amount of work on combined influence of ionizing irradiation of semiconductor devices [1,[3][4][5]. However, works on the combined and complex influence of long-term operation factors and ionizing irradiation are almost completely absent.…”

Section: Introductionmentioning

confidence: 99%

Application of Radiation Technologies for Quality Improvement of LEDs Based upon AlGaAs

Градобоев¹,

Simonova²,

Orlova³

et al. 2018

Ionizing Radiation Effects and Applications

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The investigation results of the radiation resistance and reliability of light-emitting diodes (LEDs) based upon AlGaAs are presented. The radiation model and the reliability model are described for LEDs. Preliminary irradiation by gamma-quanta and fast neutrons makes it possible to improve the radiation resistance and reliability of the LEDs during further operation. Based on the developed models, radiation technologies are proposed, and the use of which allows increasing the service properties of the LEDs. The suggested technologies can be used for other types of semiconductor devices.

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Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate

Cao,

Liu,

Wang

et al. 2024

J Comput Electron

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Single-Event Effects in Power MOSFETs During Heavy Ion Irradiations Performed After Gamma-Ray Degradation

Cited by 7 publications

References 22 publications

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

Application of Radiation Technologies for Quality Improvement of LEDs Based upon AlGaAs

Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate

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