Single event effects results for candidate spacecraft electronics for NASA

O'Bryan, M.V.; LaBel, K.A.; Howard, J.W.; Poivey, C.; Ladbury, R.L.; Kniffin, S.D.; Buchner, S.P.; Xapsos, M.; Reed, R.A.; Sanders, A.B.; Seidleck, C.M.; Marshall, C.J.; Marshall, P.W.; Titus, J.L.; McMorrow, D.; Li, K.; Gambles, J.; Stone, R.F.; Patterson, J.D.; Kim, H.S.; Hawkins, D.K.; Carts, M.A.; Forney, J.D.; Irwin, T.; Kahric, Z.; Cox, S.R.; Palor, C.

doi:10.1109/redw.2003.1281346

Cited by 9 publications

(3 citation statements)

References 11 publications

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“…Volts active bias and 10 6 ions per second heavy ion irradiation. These radiation levels corresponded to ones that have caused electronic upsets in conventional circuits during 78 Kr irradiation 14 .…”

Section: Results From Nanocircuit Experimentsmentioning

confidence: 64%

Nanotube, nanowire, and nanocircuit behavior in simulated space environments

et al. 2005

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This paper reports the results of two separate heavy ion irradiation experiments. In the first set, nanomaterial samples including single and multi wall carbon nanotubes and electrospun carbon nanofibers, with well-graphitized vapor grown carbon fibers as controls, were irradiated using a primary beam of Krypton-86 ions at 142 Amp MeV. The single and multi wall carbon nanotube samples sustained little damage from the highest radiation dose. In the second set, a gallium nitride nanowire-based field effect transistor was irradiated using a primary beam of Krypton-78 ions at 140 Amp MeV. The nanocircuit maintained normal function under high active bias and high radiation dose.Krypton-86 and Krypton-78 are representative of high-Z heavy ions encountered in a space radiation environment. Results from the pre-irradiation structure and optoelectronic characterization of the gallium nitride nanowires are also reported.

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Section: Results From Nanocircuit Experimentsmentioning

confidence: 64%

Nanotube, nanowire, and nanocircuit behavior in simulated space environments

et al. 2005

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“…The TMP36 have shown a previous good behavior against Singel Event Effects (SEE) [9]. However, this strong variation of its behavior against TID needs to be taken into consideration for its future use in space missions.…”

Section: Tmp36mentioning

confidence: 99%

The effect of proton and gamma radiation on different types of temperature sensors

González-Guerrero

Álvarez

Jiménez

et al. 2009

2009 European Conference on Radiation and Its Effects on Components and Systems

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In a study performed to test the effects of proton and gamma radiation on different temperature sensors, Pt RTDs and thermocouples show a negligible sensitivity. On the other hand, IC-based temperature sensors modify significantly their behavior. AD590 sensors exhibit a moderate degradation, depending on the encapsulation. And TMP36 sensors experiment a big degradation amounting up to a change in the readout signal about 20 ºC for a total ionizing dose of 40 krad.

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“…This voltage deviation or pulse is known as a single-event transient (SET) [1]- [42]. Over the years, there have been several attempts to categorize the SET response of analog devices [43]- [59].…”

Section: Introductionmentioning

confidence: 99%