Single Event Error Generation by 14 MeV Neutrons Reactions in Silicon

Bradford, J. N.

doi:10.1109/tns.1980.4331055

Cited by 8 publications

(5 citation statements)

References 10 publications

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“…A similar situation occurs for SEU generated by neutrons; a detailed description of this case has been given by Bradford (1980) using the mathematics of geometric probability. In deep space SEU production results mainly from the traversal of the junction by the heavy ions that make up the galactic cosmic ray (GCR) spectrum.…”

Section: Vii2 Radiation Effects On Microelectronics 47mentioning

confidence: 90%

Microdosimetry and Its Applications

1996

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PrefaceMicrodosimetry originated more than 35 years ago when the senior author studied energy deposition in small irradiated masses and formulated what is now termed Regional Microdosimetry. A.M. Kellerer developed the further concepts of Structural Microdosimetry. Microdosimetry and its applications have been the subject of an extensive literature. This includes several hundred papers which have appeared in the Proceedings of what to date have been eleven Symposia on Microdosimetry. General reviews are contained in chapters of books and in a journal dealing with a broader range of subjects. The International Commission on Radiation Units and Measurements has produced Report 36 on Microdosimetry. The form of these publications limited their scope and in this work it is our aim to provide a more comprehensive account.Dealing extensively with interdisciplinary matters (from atomic and solid state physics to integral geometry and molecular biology) we were confronted with the standard problem of presenting material in a manner that makes it comprehensible to readers with diverse backgrounds, without providing a superficial treatise. Although some readers may find it too difficult to absorb the entire contents of some chapters, they should be able to gain substantial information from introductory sections and from data presented. Occasional repetitions, including identical formulae, have reduced the need for cross-references between chapters.With the exception of chapter III it is recommended to read the book sequentially; this appeared to us to be the logical way of learning microdosimetry. The conceptual framework of microdosimetry is introduced in the first two chapters. At this stage of the presentation the details of energy deposition in matter are unimportant. The fourth and fifth chapter are the twin workhorses of microdosimetry. The fourth chapter is about the art of measuring microdosirnetric spectra. It gives details on the construction and operation of microdosimetric detectors. It also makes aware both the experimentalist and the theorist that what one measures may sometimes be different from the actual pattern of energy deposition. The material in Chapter V, the theoretical companion of the preceding chapter, comes as a result of the tremendous progress made during the past 20 years or so in obtaining cross sections for the interaction of charged particles with matter, and of the subsequent effort made to integrate these into sophisticated Monte Carlo transport codes that simulate the passage of particles through structured or unstructured matter. This chapter also brings forth the two VI Preface complementary descriptions of microdosimetric events: regional microdosimetry and structural microdosimetry. The applications of microdosimetry are described in the last two chapters. The selection of topics here reflects the research interests of the authors and also the need to provide this information within the limitations of a single volume. As a result the list of topics here should be seen as illustrative...

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Section: Vii2 Radiation Effects On Microelectronics 47mentioning

confidence: 90%

Microdosimetry and Its Applications

1996

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“…The software was modified slightly to calculate segment length distributions. Such distributions have been analytically derived by Bradford 17 ͑based on the work of Kellerer 18 ͒ for a RPP volume under the condition ofrandomness and fixed length tracks. -randomness 18 refers to the generation of straight ion tracks within a uniform isotropic field of infinite extent.…”

Section: A Method: Monte Carlo Programmentioning

confidence: 99%

Tissue equivalence correction for silicon microdosimetry detectors in boron neutron capture therapy

Bradley

Rosenfeld

1998

Medical Physics

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Reverse-biased silicon p-n junction arrays have been proposed as microdosimetry detectors. The tissue equivalence of such detectors in boron neutron capture therapy ͑BNCT͒ is discussed. A comparison of the range-energy relationships of H, He, C, and Li ions in tissue ͑ICRU-muscle͒ and silicon is given. A simple geometrical scaling ͑ϳ0.63͒ of linear dimensions is required to convert microdosimetric energy deposition measurements performed in silicon to equivalent deposition in tissue. The Monte Carlo technique is used to examine energy deposition for two simple geometrical cases applicable to BNCT.

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“…Equations (6.33) and (6.42) can be used (in practice with TRIM [301,359,384]) to estimate the deposited energy by the ions, E dep , across the distance l, assuming a continuous slowing down and a linear trajectory. The probability to trigger an upset is the probability to have a deposited energy larger than the critical energy E th of the device component and the probability to have an upset is: Then, the upset rate, N SEU , is expressed as a function of the incident LET spectrum and the path length distribution [402]:…”

Section: See Cross-sectionmentioning

confidence: 99%

Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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Single Event Error Generation by 14 MeV Neutrons Reactions in Silicon

Cited by 8 publications

References 10 publications

Microdosimetry and Its Applications

Microdosimetry and Its Applications

Tissue equivalence correction for silicon microdosimetry detectors in boron neutron capture therapy

Particle interaction and displacement damage in silicon devices operated in radiation environments

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