Single Event Upset Measurements of Gaas E-JFET RAMS

Shapiro, P.; Campbell, A.B.; Ritter, J.C.; Zuleeg, R.; Notthoff, J. K.

doi:10.1109/tns.1983.4333181

Cited by 19 publications

(3 citation statements)

References 4 publications

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“…In an extension of that model using the Monte Carlo method, it was possible to calculate the heating rate of each particle as it passed through the device at various locations [59]. Single event effects were found to be important in GaAs digital ICs with the first single event upsets (SEUs) reported [60], [61] in 1983 and 1984. Decoupling and circuit techniques previously applied to CMOS SRAMs offered limited success in GaAs JFET SRAMs [4], [62].…”

Section: Device Radiation Effects: 1970s and 1980smentioning

confidence: 99%

Historical perspective on radiation effects in III-V devices

Weatherford

Anderson²

2003

IEEE Trans. Nucl. Sci.

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Section: Device Radiation Effects: 1970s and 1980smentioning

confidence: 99%

Historical perspective on radiation effects in III-V devices

Weatherford

Anderson²

2003

IEEE Trans. Nucl. Sci.

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“…3 ' 66 The sensitivity of GaAs FET-based technologies to SEU, however, rapidly became apparent. 65,67 " 77 It is now widely recognized that GaAs ICs exhibit SEU sensitivity to protons as well as very low LET particles, making their SEU performance a serious concern for applications in radiation environments.…”

Section: Single-event Effects In Gaas Devices and Circuitsmentioning

confidence: 99%

Radiation Effects in Iii-v Semiconductor Electronics

Weaver

McMorrow

Cohn³

2003

Int. J. Hi. Spe. Ele. Syst.

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Particle irradiation effects in III-V semiconductor devices and selected circuits are reviewed. Radiation effects concerns in III-V devices are associated primarily with displacement damage and single-event upset. In conventional transistors, displacement damage decreases the gain, increases leakage and shifts the collector-emitter offset voltage. In reduced dimensional devices. such as high electron mobility transistors and resonant tunneling diodes, the main displacement damage effect is to reduce current by increasing scattering out of the two-dimensional transport state. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are also discussed here. Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles; this sensitivity becomes more significant as clock rates and operating speeds increase.

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“…Past work has reported the effect of neutrons, electrons, cosmic rays, and gamma rays on the device characteristics of GaAs MESFETs. [5][6][7][8][9][10][11][12][13][14] Much less is known about the effects of high energy proton irradiation of the type encountered in satellites employed for broad-band transmission or weather forecasting.…”

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confidence: 99%

Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors

Luo¹,

Johnson²,

Ren³

et al. 2002

J. Electrochem. Soc.

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GaAs metal-semiconductor field effect transistors were exposed to 40 MeV protons at fluences up to 5×109 cm−2. The extrinsic transconductance decreased from 98 to 68 mS mm−1 over this fluence range, with the drain-source current decreasing by ∼30% under the same conditions. Based on the increases observed in the reverse breakdown voltage and the channel resistance, the main degradation mechanism appears to be introduction of deep electron traps which reduce the effective doping in the channel. The device threshold voltage and diode ideality factor showed little change upon irradiation. © 2002 The Electrochemical Society. All rights reserved.

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Single Event Upset Measurements of Gaas E-JFET RAMS

Cited by 19 publications

References 4 publications

Historical perspective on radiation effects in III-V devices

Historical perspective on radiation effects in III-V devices

Radiation Effects in Iii-v Semiconductor Electronics

Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors

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