Single Event Upset Sensitivity of D-Flip Flop of Infrared Image Sensors for Low Temperature Applications Down to 77 K

Artola, L.; Hubert, G.; Gilard, O.; Ducret, S.; Perrier, F.; Boutillier, M.; Garcia, P.; Baradat, B.; Ricard, N.

doi:10.1109/tns.2015.2499316

Cited by 12 publications

(24 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An increase in temperature is known to lead to an increase in the SET duration [19]. This point is in good correlation with previous works which highlighted that if a cryogenic temperature dependence of SEE occurrence is observed, the worst case must be at room temperature [13] [14]. The simulations highlight the potential SET sensitivity of the clock buffer at 300 K (in red).…”

Section: Fig 4 General Framework Of Sefi Modeling In the Digital Parsupporting

confidence: 88%

“…The readout circuits developed and studied in this work has been developed by Sofradir in a 0.25 µm Bulk technology, with shallow trench isolation (STI) [13]. This technology is a mixed technology allowing high voltages on analog parts.…”

Section: Infrared Image Sensormentioning

confidence: 99%

“…The Monte Carlo (MC) radiation tool, MUSCA SEP3 was used [11][12] [13]. This tool is developed at ONERA since 2008.…”

Section: B Description Of the Sefi Modeling Approachmentioning

confidence: 99%

“…At transistor level, the injections are performed using the SET databased generated by MUSCA SEP3 as done in several previous works [12] [13]. These simulations allowed estimating the SET and SEU cross sections of a set of basic digital cell used in the ROIC.…”

Section: Fig 4 General Framework Of Sefi Modeling In the Digital Parmentioning

confidence: 99%

See 3 more Smart Citations

SEFI Modeling in Readout Integrated Circuit Induced by Heavy Ions at Cryogenic Temperatures

Artola

Ducret

Advent

et al. 2019

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

This paper presents for the first time a modeling approach of SEFI which takes into account all the physical and electrical processes from the radiation particle down to the event at the system level. This work was focused on the evaluation of SEFI sensitivity by experimental and simulation analyses of a ROIC designed by Sofradir for their IR image sensors. Relevant correlations between simulation and experimental results of SEFI cross sections for heavy ions were presented and discussed. The simulation results confirmed the strong SEFI robustness of the ROIC at 57 K.

show abstract

Section: Fig 4 General Framework Of Sefi Modeling In the Digital Parsupporting

confidence: 88%

Section: Infrared Image Sensormentioning

confidence: 99%

“…The Monte Carlo (MC) radiation tool, MUSCA SEP3 was used [11][12] [13]. This tool is developed at ONERA since 2008.…”

Section: B Description Of the Sefi Modeling Approachmentioning

confidence: 99%

Section: Fig 4 General Framework Of Sefi Modeling In the Digital Parmentioning

confidence: 99%

See 2 more Smart Citations

SEFI Modeling in Readout Integrated Circuit Induced by Heavy Ions at Cryogenic Temperatures

Artola

Ducret

Advent

et al. 2019

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Compact modeling is used to improve the Latchup immunity of the reference structure of Sofradir. The reference structure of Sofradir (SAC_ref) was tested under heavy ion beam at 67 MeV.cm 2 .mg -1 at UCL in Belgium and it was demonstrated a Latchup immunity of Sofradir technology [7]. This confirms the relevance of the SEL modeling presented in this work.…”

Section: Single Event Latchup Estimation Of Dff Used In Roic Frosupporting

confidence: 78%