Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon

Florian, Camilo; Fischer, Daniel; Freiberg, Katharina; Duwe, Matthias; Sahre, Mario; Schneider, Stefan; Hertwig, Andreas; Krüger, Jörg; Rettenmayr, Markus; Beck, Uwe; Undisz, Andreas; Bonse, Jörn

doi:10.3390/ma14071651

Cited by 33 publications

(18 citation statements)

References 74 publications

(111 reference statements)

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“…The formation of surface structure induced by fs laser processing is commonly accompanied by a series of phase transitions on the subsurface of the materials [ 44 , 45 ]. To further analyze the phase transition of the subsurface layer of the LIPSS, HRTEM analysis was performed on the purple square 1 in Figure 5 a.…”

Section: Resultsmentioning

confidence: 99%

Research on Monocrystalline Silicon Micro-Nano Structures Irradiated by Femtosecond Laser

et al. 2022

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Femtosecond (fs) laser processing has received great attention for preparing novel micro-nano structures and functional materials. However, the induction mechanism of the micro-nano structures induced by fs lasers still needs to be explored. In this work, the laser-induced periodic surface structure (LIPSS) of monocrystalline silicon (Si) under fs laser irradiation is investigated. Three different layers named amorphous silicon (a-Si) layer, transition layer, and unaffected Si layer are observed after laser irradiation. The a-Si layer on the surface is generated by the resolidification of melting materials. The unaffected Si layer is not affected by laser irradiation and maintains the initial atomic structure. The transition layer consisting of a-Si and unaffected Si layers was observed under the irradiated subsurface. The phase transition mechanism of Si irradiated by fs laser is “amorphous transition”, with the absence of other crystal structures. A numerical model is established to describe the fs laser-Si interaction to characterize the electronic (lattice) dynamics of the LIPSS formation. The obtained results contribute to the understanding of fs laser processing of Si at the atomic scale as well as broaden the application prospects of fs laser for treating other semiconductor materials.

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Section: Resultsmentioning

confidence: 99%

Research on Monocrystalline Silicon Micro-Nano Structures Irradiated by Femtosecond Laser

et al. 2022

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“…The same inability of strong single pulse amorphization in Si <100> has been reported for λ laser = 800 nm. [ 14,12 ] This result underlines the importance of the laser wavelength for the initial energy deposition profile and suggests that these relatively standard wavelengths for fs lasers are not ideal for deep amorphization. Concerning the other wavelengths used in our study, we have found that the maximum thickness was obtained for λ laser = 3 µm, just as for our experiments in Si <111> .…”

Section: Resultsmentioning

confidence: 99%

“…[26,27] Recent studies using fs laser pulses confirmed the increased difficulty of Si <100> to amorphize. [12,28] Moreover, Yater and coworkers reported an orientation dependence of the maximum amorphous layer thickness achieved using UV nanosecond laser pulses, yielding thicker layers for Si <111> . [29] These studies imply that an even stronger undercooling (and thus larger thermal gradient) is required for surface amorphization in Si <100> .…”

Section: Dependence On Crystal Orientation and Presence Of A Thick Si...mentioning

confidence: 99%

“…[8,9] Comparable maximum thickness values were obtained by several other groups: The Bonse group investigated conditions of single, 30 fs laser pulse irradiation at 800 nm, obtaining a maximum thickness of t ≈ 60 nm. [10][11][12] Their most recent study [12] on amorphization and recrystallization of bare Si <111> and Si <100> introduces a novel method for determination of the amorphous layer thickness: spectroscopic imaging ellipsometry. This optical method allows high resolution measurements of the lateral thickness profile of amorphous spots.…”

Section: Introductionmentioning

confidence: 99%

“…[13,[15][16][17]19] It is worth mentioning that the fs laser-induced amorphization process is not accompanied by a change in the surface topography, except the temporary removal of the 2-3 nm thick native oxide layer, as convincingly shown in ref. [12].…”

Section: Introductionmentioning

confidence: 99%

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Deep Silicon Amorphization Induced by Femtosecond Laser Pulses up to the Mid‐Infrared

García-Lechuga

Casquero

Wang

et al. 2021

Advanced Optical Materials

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Direct laser writing of amorphous lines in crystalline silicon has the potential for becoming a flexible alternative to silicon‐on‐insulator technology for photonic integrated circuits. Yet, the maximum amorphous layer thickness achieved is 60 nm, which is below the requirements for waveguiding at telecom wavelengths. Here, the authors report on different strategies to push the layer thickness beyond today's limit. To this end, irradiation with femtosecond laser pulses covering an extremely broad wavelength range (515 nm–4 µm) up to the yet unexplored near‐ and mid‐infrared region of silicon transparency is investigated. The results show that much thicker amorphous layers can be obtained upon multipulse irradiation at 3‐µm wavelength. The deepest amorphization is achieved in silicon wafers covered with a thick silicon dioxide layer that strongly assists the heat extraction, yielding steep index profiles with a maximum amorphous layer thickness of 128 nm. This superior thickness is compatible with single mode waveguiding for a symmetric waveguide configuration. This study also contributes to a better understanding of the mechanisms involved in laser‐induced amorphization.

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Laser‐Induced Positional and Chemical Lattice Reordering Generating Ferromagnetism

Pflug,

Pablo‐Navarro,

Anwar

et al. 2023

Adv Funct Materials

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Atomic scale reordering of lattices can induce local modulations of functional material properties, such as reflectance and ferromagnetism. Pulsed femtosecond laser irradiation enables lattice reordering in the picosecond range. However, the dependence of the phase transitions on the initial lattice order as well as the temporal dynamics of these transitions remain to be understood. This study investigates the laser‐induced atomic reordering and the concomitant onset of ferromagnetism in thin Fe‐based alloy films with vastly differing initial atomic orders. The optical response to single femtosecond laser pulses on selected prototype systems, one that initially possesses positional disorder, Fe60V40, and a second system initially in a chemically ordered state, Fe60Al40, has been tracked with time. Despite the vastly different initial atomic orders the structure in both systems converges to a positionally ordered but chemically disordered state, accompanied by the onset of ferromagnetism. Time‐resolved measurements of the transient reflectance combined with simulations of the electron and phonon temperatures reveal that the reordering processes occur via the formation of a transient molten state with an approximate lifetime of 200 ps. These findings provide insights into the fundamental processes involved in laser‐induced atomic reordering, paving the way for controlling material properties in the picosecond range.

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Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon

Cited by 33 publications

References 74 publications

Research on Monocrystalline Silicon Micro-Nano Structures Irradiated by Femtosecond Laser

Research on Monocrystalline Silicon Micro-Nano Structures Irradiated by Femtosecond Laser

Deep Silicon Amorphization Induced by Femtosecond Laser Pulses up to the Mid‐Infrared

Laser‐Induced Positional and Chemical Lattice Reordering Generating Ferromagnetism

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