Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips

Wunderer, Thomas; Siddharth, Anat; Johnson, N. M.; Chua, C.L.; Teepe, Mark; Yang, Zhihong; Batres, Max; Maeda, Patrick; Likhachev, Grigorii; Kippenberg, Tobias J.

doi:10.1364/ol.486758

Cited by 9 publications

(3 citation statements)

References 20 publications

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“…Room temperature microdisk lasers have been demonstrated under electrical injection with Si(100) substrate [87], thus indicating that laser integration is not limited to sapphire substrates. A GaN-based Fabry-Perot laser diode butt-coupled to a crystalline III-N photonic integrated circuit chip with either AlN, AlGaN, or GaN waveguide core was reported very recently [139]. It highlights the potential of hybrid integration with, in the latter case, the demonstration of laser self-injection locking and single-frequency operation.…”

Section: Iii-nitride Photonic Platform: What Has Been Achieved So Farmentioning

confidence: 97%

Perspectives for III-nitride photonic platforms

Boucaud,

Bhat,

Gromovyi

et al. 2024

Nano Futures

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The development of photonic platforms for the visible or ultra-violet spectral range represents a major challenge. In this article, we present an overview of the technological solutions available on the market. We discuss the pros and cons associated with heterogeneous or monolithic integration. We specifically focus on the III-nitride platform for integrated photonics. The III-nitrides offer every building block needed for a universal platform. We discuss the additional opportunities offered by combining III-nitride semiconductors with other materials such as two-dimensional materials.

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Section: Iii-nitride Photonic Platform: What Has Been Achieved So Farmentioning

confidence: 97%

Perspectives for III-nitride photonic platforms

Boucaud,

Bhat,

Gromovyi

et al. 2024

Nano Futures

View full text Add to dashboard Cite

show abstract

“…The low phase noise was achieved via self-injection locking of the Fabry-Pérot diode laser to a high-Q photonic integrated microresonator. This was followed by the demonstration of low-phase-noise, narrow emission linewidth integrated photonic laser diodes at 412 nm and 461 nm [101,102].…”

Section: Monolithic Integrationmentioning

confidence: 99%

On-Chip Lasers for Silicon Photonics

Zhang,

Shankar,

Wang

2024

Photonics

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With the growing trend in the information industry, silicon photonics technology has been explored in both academia and industry and utilized for high-bandwidth data transmission. Thanks to the benefits of silicon, such as high refractive index contrast with its oxides, low loss, substantial thermal–optical effect, and compatibility with CMOS, a range of passive and active photonic devices have been demonstrated, including waveguides, modulators, photodetectors, and lasers. The most challenging aspect remains to be the on-chip laser source, whose performance is constrained by the indirect bandgap of silicon. This review paper highlights the advancements made in the field of integrated laser sources on the silicon photonics platform. These on-chip lasers are classified according to their gain media, including V semiconductors, III–V semiconductors, two-dimensional materials, and colloidal quantum dots. The methods of integrating these lasers onto silicon are also detailed in this review.

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“…Much progress has been made recently through hybrid integration of gallium nitride (GaN)-based gain chips with SiN to create single-frequency laser emission. [5][6][7] However, the most compact solution is heterogeneous integration of the laser on the PIC. This can be done by evanescent coupling realized through wafer bonding, by transfer printing or by end-fire coupling using an etched facet laser, which is the topic addressed here.…”

Section: Introductionmentioning

confidence: 99%

Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics

Genc,

Zubialevich,

Hazarika

et al. 2023

Advanced Photonics Research

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The success of silicon photonics is sparking widespread interest in photonic integrated circuits at visible light wavelengths using SiN and other waveguiding platforms. Compact active circuits desire the heterogeneous integration of GaN‐based laser diodes. Herein, the optimization of smooth and vertical facets is reported using a combination of inductively coupled plasma etching followed by wet etching with a tetramethylammonium hydroxide‐based solution. Facet quality for concave‐, flat‐, and convex‐shaped structures surrounding the mirror is compared. Convex‐shaped structures result in the highest facet quality due to the evolution of the crystal plane‐dependent etching. 2 μm‐wide ridge waveguide, etched facet Fabry–Pérot cavity lasers with length of 1.5 mm emitting at 457 nm are realized using the optimized process. The lasers deliver up to 28 mW of optical power at 250 mA under continuous wave with slope efficiency of 0.26 W A−1 and lasing threshold current density of 4.6 kA cm−2.

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Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips

Cited by 9 publications

References 20 publications

Perspectives for III-nitride photonic platforms

Perspectives for III-nitride photonic platforms

On-Chip Lasers for Silicon Photonics

Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics

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