Single Fundamental-Mode Output Power Exceeding 6 mW From VCSELs With a Shallow Surface Relief

Haglund, Åsa; Gustavsson, Johan S.; Vukušić, Josip; Modh, P.; Larsson, Anders

doi:10.1109/lpt.2003.821085

Cited by 206 publications

(87 citation statements)

References 9 publications

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“…The extent of suppression of higher order modes is quantified by the mode stability factor , defined as [9] % (2) where and represent the threshold gains of the fundamental and first-order modes, respectively. In Fig.…”

Section: Hcg Vcselmentioning

confidence: 99%

Subwavelength Grating-Mirror VCSEL With a Thin Oxide Gap

Chung

Mørk

Gilet

et al. 2008

IEEE Photon. Technol. Lett.

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Abstract-A new vertical-cavity surface-emitting laser (VCSEL) structure based on a subwavelength grating mirror and a thin oxide gap is suggested and numerically investigated. The structure is shown to exhibit similar threshold gain, suppression of higher order transverse modes, and polarization stability as a grating-mirror VCSEL reported in the literature based on a thick air gap. The thin oxide gap structure has a number of advantages including easier fabrication, better mechanical stability, and very strong single-mode properties.

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Section: Hcg Vcselmentioning

confidence: 99%

Subwavelength Grating-Mirror VCSEL With a Thin Oxide Gap

Chung

Mørk

Gilet

et al. 2008

IEEE Photon. Technol. Lett.

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“…Однако низкая выходная оптическая мощность и относительно высокий пороговый ток [80] в совокупности с технологической сложностью формирования такого рода оптической апертуры ограничивают практическое использование такого подхода. Наиболее перспективным направлением для контроля модового состава ВИЛ [81] является формирование поверхностного рельефа путем локального травления выводного зеркала на глубину, кратную толщине четвертьволнового слоя РБО. Однако с точки зре-ния существенного повышения быстродействия ВИЛ данный подход выигрыша не обеспечивает [82] и преимущественно применяется для повышения дальности передачи данных при сохранении приемлемо высокой скорости [83,84].…”

Section: управление модовым составом излученияunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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“…3 Even more interesting is an analogous method known as an inverted−relief technique. Its main idea consists in grow− ing an extra l/(4n R )−thick layer on the top of the output DBR structure and etching a circular disk−shaped structure through this layer in the DBR centre (lines 22, 25, and 30-32) [35][36][37][38][39] [Fig. 3(d)].…”

Section: Mirror Lossesmentioning

confidence: 99%

“…The main advantage of this method is that it utilizes the high precision in the epitaxial growth to reach a narrow local maximum in the mirror losses [35]. Therefore this structure is essentially enabling application of a high−precision technology and reaching for the 850−nm emission the SFM operation up to 6.5 mW [35].…”

Section: Mirror Lossesmentioning

confidence: 99%

VCSEL structures used to suppress higher-order transverse modes

Nakwaski

2011

Opto-Electronics Review

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Currently unwanted excitation of higher-order transverse modes is the most serious drawback of vertical-cavity surface-emitting diode lasers (VCSELs) limiting their possible applications. In the present paper, various methods used to suppress those modes are described and their effectiveness is compared. It is well known that, because of a nearly uniform current injection into their active regions, small-aperture VCSELs without any modification offer quite high single-fundamental-mode (SFM) output. However, their series resistance is often too high, which aggravates their high-modulation performance. Similarly uniform current injection may be also achieved with the aid of a tunnelling junction. Generally, methods suppressing higher-order modes take advantage of higher optical gain within the central part of the active region, higher radiation losses outside this region and/or higher central mirror reflectivity. Currently, applications of a tunnel junction, an impurity-induced disordering or an inverted shallow surface relief seem to be the simplest and the most effective methods. The deep etched holey structure or the ARROW structure enable obtaining similar single-mode output powers but they may be used in special cases only because of their complex technology. Photonic crystals may probably enable more advanced mechanisms of suppressing higher-order modes in future because currently their application seems to be still far from being optimised.

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Single Fundamental-Mode Output Power Exceeding 6 mW From VCSELs With a Shallow Surface Relief

Cited by 206 publications

References 9 publications

Subwavelength Grating-Mirror VCSEL With a Thin Oxide Gap

Subwavelength Grating-Mirror VCSEL With a Thin Oxide Gap

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

VCSEL structures used to suppress higher-order transverse modes

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