Single Gate Graphene Nanoribbon-on-Insulator (GNROI) FET as a Novel Strategy to Enhance Electrical Performance-Numerically RF and DC Characteristics Extraction

Abstract

Graphene nanoribbon Field Effect Transistor (GNRFET) as a recently introduced interesting candidate has gotten a great deal of interest in many device fields. The paper has suggested a novel configuration in the case of only single gate on the top channel. The GNR is deposited on SiO 2 considered as the thick buried oxide instead of SiC material in the single gate conventional GNRFET. This reformation is led to the gradual variation of the surface potential thus increasing the electric field and electron velocity. An increase in the drain current for the proposed device is the most important exploration in this work. The numerically extracted parameters by TCAD revealed the electrical performance improvement for both the DC and RF conditions in the cases of the ON current, sub-threshold swing, DIBL, I on /I off , parasitic capacitances, transconductance, power gains, and output conductance. It is worth noting that the short channel effects are well controlled in the new proposed configuration. Also, the impact of different High-K dielectrics as the buried oxide on the electrical performance has been studied and the most suitable buried oxide has been selected to reach the best results.

A Half Adder Design Based on Ternary Multiplexers in Carbon Nano-Tube Field Effect Transistor (CNFET) Technology

“…20. It is worth noting that although several TCAD based models are proposed in the literature for either CNFETs or graphenenanoribbon FETs (GNRFETs), [21][22][23][24][25][26][27][28][29] most of them are not in the form of a compact model and thus, are not consistent for use in circuit simulators. However, the model presented in Ref.…”

Analysis of transition metal dichalcogenides materials based gas sensor using non‐equilibrium green's function

“…The most common 2D materials are graphene, transition metal dichalcogenides and black phosphorous (BP). Graphene cannot be used in FETs as it has zero bandgap structure (under specific conditions), although it can be tailored but the mobility of charge carriers gets degraded 13–15 . BP has potential applications in nanoelectronic and optoelectronic devices.…”

“…Graphene cannot be used in FETs as it has zero bandgap structure (under specific conditions), although it can be tailored but the mobility of charge carriers gets degraded. [13][14][15] BP has potential applications in nanoelectronic and optoelectronic devices. It shows bipolar behavior and has high electron/hole mobility [1000cm 2 (V-Sec) À1 ] but proper selection of insulating material for BP-based FET is still a challenge as BP suffers from a high density of interface trap charge (ITCs) which reduces the mobility of charge carriers.…”