Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser

Ishihara, Ryoichi; Zhang, Jin; Trifunovic, Miki; Zwan, M. van der; Takagishi, Hideyuki; Kawajiri, Ryo; Shimoda, Tatsuya; Beenakker, C.I.M.

doi:10.1149/05008.0049ecst

Cited by 5 publications

(4 citation statements)

References 6 publications

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“…[2] Most concepts of highly efficient SHJ solar cells use intrinsic hydrogenated amorphous silicon (a-Si:H) films, which are also used in other devices such as diodes, thin film transistors, or batteries. [2][3][4][5] In SHJ solar cells, aSi:H films with very low thicknesses act as passivating contact layers to the crystalline silicon (c-Si) wafer. [6][7][8] In the future, silicon wafers will become thinner requiring higher passivation quality compared to current solar cells, because interface recombination will be more limiting compared to bulk recombination.…”

Section: Introductionmentioning

confidence: 99%

Insights into the Si─H Bonding Configuration at the Amorphous/Crystalline Silicon Interface of Silicon Heterojunction Solar Cells by Raman and FTIR Spectroscopy

Fischer,

Lambertz,

Nuys

et al. 2023

Advanced Materials

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In silicon heterojunction (SHJ) solar cell technology, thin layers of hydrogenated amorphous silicon (a‐Si:H) are applied as passivating contacts to the crystalline silicon (c‐Si) wafer. Thus, the properties of the a‐Si:H is crucial for the performance of the solar cells. One important property of a‐Si:H is its microstructure which can be characterized by the microstructure parameter R based on Si‐H bond stretching vibrations. A common method to determine R is Fourier transform infrared (FTIR) absorption measurement which, however, is difficult to perform on solar cells by various reasons like the use of textured Si wafers and the presence of conducting oxide contact layers. Here, we demonstrate that Raman spectroscopy is suitable to determine the microstructure of bulk a‐Si:H layers of 10 nm or less on textured c‐Si underneath indium tin oxide as conducting oxide. We perform a detailed comparison of FTIR and Raman spectra and find significant differences of the microstructure parameter obtained by both methods with decreasing a‐Si:H film thickness.This article is protected by copyright. All rights reserved

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Section: Introductionmentioning

confidence: 99%

Insights into the Si─H Bonding Configuration at the Amorphous/Crystalline Silicon Interface of Silicon Heterojunction Solar Cells by Raman and FTIR Spectroscopy

Fischer,

Lambertz,

Nuys

et al. 2023

Advanced Materials

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“…In addition, the liquid phase processing of the silicon precursor allows for high deposition rates using well-established techniques such as ink-jet printing, slot-die casting and aerosol coating. Applications include optoelectronic devices such as thin-film transistors [2,3], solar cells [4][5][6], and more recently, passivation layers in silicon heterojunction solar cells [7].…”

Section: Introductionmentioning

confidence: 99%

Liquid hydridosilane precursor prepared from cyclopentasilane via sonication at low temperatures without the action of light

Bedini

Muthmann

Allgaier

et al. 2017

Ultrasonics Sonochemistry

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We report on a liquid hydridosilane precursor ink prepared via the ultrasonically induced ring-opening polymerisation of cyclopentasilane (SiH) without irradiation by ultraviolet light. The sonication is carried out in N atmosphere at temperatures between 20 and 75°C. We use size exclusion chromatography (SEC) to show polymer growth and estimate molecular mass with increasing sonication time. In combination with UV-vis transmission measurements, further SEC analysis is used to compare solutions subjected to either purely thermal or ultrasonic treatment at the same process temperature and for the same duration. Our findings provide strong evidence showing that the initiation of the polymerisation is sonocatalytic in nature and not thermic due to the macroscopic temperature of the solution. The liquid precursor is used to produce homogeneous hydrogenated amorphous silicon (a-Si:H) thin films via spin coating and pyrolytic conversion. The optoelectronic properties of the films are subsequently improved by hydrogen radical treatment. Fourier transform infrared spectroscopy (FTIR) is used to determine a compact film morphology and electrical conductivity measurements show that the layers attain a light-to-dark photosensitivity ratio of 2×10 making them suitable for application in optoelectronic devices.

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“…The fabrication of amorphous and microcrystalline silicon films from printed or sprayed layers presents a low‐cost alternative to conventional high‐vacuum techniques such as plasma enhanced chemical vapor deposition (PECVD). Such inks have already been used in a variety of different optoelectronic applications, including thin‐film solar cells, TFTs, and surface passivation layers for Si wafers …”

Section: Introductionmentioning

confidence: 99%

Sonophotolytically Synthesized Silicon Nanoparticle‐Polymer Composite Ink from a Commercially Available Lower Silane

Bedini

Muthmann

Flohre

et al. 2016

Macro Chemistry & Physics

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The preparation of a printable silicon ink using semiconductor grade and commercially available trisilane (Si3H8) is reported. The synthesis is carried out in solution at room temperature or below in N2 atmosphere at ambient pressure and involves an initial sonication step, followed by irradiation with ultraviolet light. The production of higher order silanes via ultrasound is demonstrated using gas chromatography and nuclear magnetic resonance measurements are used to show that a combined sonophotolytic treatment yields a highly branched silicon hydride polymer. In addition, scanning electron microscopy (SEM) images are used to ascertain the sonocatalytic production of silicon nanoparticles. Furthermore, it is argued that these particles are partially responsible for enabling dramatically accelerated polymer growth, not otherwise observed in the same amount of time using ultraviolet light alone. Finally, the utility of the ink used in this study is demonstrated for the field of printable electronics by fabricating amorphous silicon thin films by spin‐coating and atmospheric pressure chemical vapor deposition with optoelectronic properties approaching those of state‐of‐the‐art plasma enhanced chemical vapor deposition (PECVD) material.

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Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser

Cited by 5 publications

References 6 publications

Insights into the Si─H Bonding Configuration at the Amorphous/Crystalline Silicon Interface of Silicon Heterojunction Solar Cells by Raman and FTIR Spectroscopy

Insights into the Si─H Bonding Configuration at the Amorphous/Crystalline Silicon Interface of Silicon Heterojunction Solar Cells by Raman and FTIR Spectroscopy

Liquid hydridosilane precursor prepared from cyclopentasilane via sonication at low temperatures without the action of light

Sonophotolytically Synthesized Silicon Nanoparticle‐Polymer Composite Ink from a Commercially Available Lower Silane

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