Single-lateral-mode operation of 980-nm InGaAs-(Al)GaAs pump lasers with uncoated and coated facets

Paradisi, A.; Sachs, Antonio de Campos; Gobbi, Ângelo L.; Filho, J.R.; Martins, R.B.

doi:10.1109/68.491553

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2009

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Cited by 7 publications

(2 citation statements)

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“…Therefore, the highest kink level is expected at S ¼ 1:98 mm. If the injected current is much higher, spatial hole burning becomes significant, 3,9,12) and the modal gain of the first-order mode exceeds that of the fundamental mode, leading to kinks in the I-L curves.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Ridge-Type Semiconductor Lasers with Antiguiding Layers for Horizontal Transverse Modes: Dependence on Space in the Antiguiding Layers

Yoshida

Numai

2009

Jpn. J. Appl. Phys.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Ridge-Type Semiconductor Lasers with Antiguiding Layers for Horizontal Transverse Modes: Dependence on Space in the Antiguiding Layers

Yoshida

Numai

2009

Jpn. J. Appl. Phys.

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“…The simplest, most straightforward structure that ensures STM-operation is the ridge waveguide (RWG) structure. While there are many studies regarding the vertical (parallel with the epitaxial growth direction) single-mode operation as well as many papers offering simple dimensional guidelines for achieving STM-operation (Paradisi et al 1996), there are very few simulation and experimental studies that even attempt a systematic analysis of the whole RWG solution space (Achtenhagen et al 2006).…”

Section: Introductionmentioning

confidence: 99%

Optimization studies of single-transverse-mode 980 nm ridge-waveguide lasers

et al. 2008

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The paper presents a simple and efficient Mode-Solver-based method for determining the ridge profile that ensures stable single-transverse-mode operation in ridge waveguide lasers. A quantitative figure of merit, easily derived from the Mode Solver analysis of the structure, indicates the likelihood of single transverse modal behavior over the whole bias range. The transverse mode analysis performed with the in-house developed software has been compared with the results of the commercial simulation package LASTIP and with experiments. The simulation and experimental results have been used to derive processing guidelines for achieving a stable single-transverse-mode operation in ridge waveguide lasers.

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Dependence of output properties on ridge structures and asymmetric facet reflectivity in 0.98-μm InGaAs-InGaAsP-InGaP SQW FP-LDs

Cho

Shim²,

Jang³

et al. 1998

IEEE J. Quantum Electron.

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Single-lateral-mode operation of 980-nm InGaAs-(Al)GaAs pump lasers with uncoated and coated facets

Cited by 7 publications

References 12 publications

Ridge-Type Semiconductor Lasers with Antiguiding Layers for Horizontal Transverse Modes: Dependence on Space in the Antiguiding Layers

Ridge-Type Semiconductor Lasers with Antiguiding Layers for Horizontal Transverse Modes: Dependence on Space in the Antiguiding Layers

Optimization studies of single-transverse-mode 980 nm ridge-waveguide lasers

Dependence of output properties on ridge structures and asymmetric facet reflectivity in 0.98-μm InGaAs-InGaAsP-InGaP SQW FP-LDs

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