2014
DOI: 10.1021/jp411256g
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Single-Layer MoS2 with Sulfur Vacancies: Structure and Catalytic Application

Abstract: Single-layer MoS 2 is proving to be a versatile material for a wide variety of electronic, optical, and chemical applications. Sulfur depletion, without destabilization of the single layer, is considered a prudent way for making the basal plane of the layer catalytically active. Based on the results of our density-functional-theory examination of vacancy structures on one side of an MoS 2 layer, we show that the formation energy per sulfur vacancy is the lowest (energetically favorable) when the vacancies form… Show more

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Cited by 273 publications
(233 citation statements)
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“…Even though the differences are rather small (−0.06 eV, −0.10 eV and −0.04 eV), already the observation that the energetic cost of forming divacancies is approximately equal to forming monovacancies can intuitively be regarded as rather surprising. Nevertheless, this behavior is in line with results reported by Le et al 63 as well as Sensoy et al 64 . In the latter work it is shown that the defect-induced lattice reorganization in the 2H-MoS 2 basal plane is very small and local, and that the interaction between isolated monovacancies is negligible.…”
Section: Formation Energysupporting
confidence: 93%
“…Even though the differences are rather small (−0.06 eV, −0.10 eV and −0.04 eV), already the observation that the energetic cost of forming divacancies is approximately equal to forming monovacancies can intuitively be regarded as rather surprising. Nevertheless, this behavior is in line with results reported by Le et al 63 as well as Sensoy et al 64 . In the latter work it is shown that the defect-induced lattice reorganization in the 2H-MoS 2 basal plane is very small and local, and that the interaction between isolated monovacancies is negligible.…”
Section: Formation Energysupporting
confidence: 93%
“…According to modern con cepts, the edges sites formed by cutting the laminar packing perpendicular to the orientation of the basal planes are catalytically active. In accordance with the calculations, the most catalytically active metal atoms can be on the surface layer, in the vicinity of which chalcogene atom is absent [5].…”
Section: Introductionsupporting
confidence: 85%
“…Insertion of 1T‐MoS 2 into 2H‐MoS 2 as a phase defect is expected to be a potential method to enhance conductivity and to increase active sites for MoS 2 under relatively mild synthetic condition . Besides phase change, another strategy to promote catalytically performance of MoS 2 is the introduction of S‐vacancies into MoS 2 crystal structure . It has been reported that the exposed atoms adjacent to S‐vacancies are activated; the uncoordinated Mo atoms allow their d‐states to bind adsorbed species and also allow S atoms to bind hydrogen atoms, resulting in an increased concentration of active sites .…”
Section: Introductionmentioning
confidence: 99%