2019
DOI: 10.1063/1.5079860
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Single layer MoS2 nanoribbon field effect transistor

Abstract: We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50 nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high current density of 38 µA/µm resulting in high on/off ratio of the order of 10 5 . We observe mobility reaching as high… Show more

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Cited by 41 publications
(37 citation statements)
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“…The purple trace (∆) in figure 2a shows transconductance measurement at T=300K after etching the single layer MoS2 flake into a nanoribbon of dimensions: W=50nm and L=500nm. Thresholdvoltage for etched NR device shifted significantly to the right, consistent with the previous reports[22,23].…”
supporting
confidence: 92%
“…The purple trace (∆) in figure 2a shows transconductance measurement at T=300K after etching the single layer MoS2 flake into a nanoribbon of dimensions: W=50nm and L=500nm. Thresholdvoltage for etched NR device shifted significantly to the right, consistent with the previous reports[22,23].…”
supporting
confidence: 92%
“…It is found that the nature and the position of Dirac cone in graphene, the indirect‐to‐direct bandgap transition, and the spin–orbit coupling of transition metal dichalcogenides (TMDs) are tunable by controlling the morphology. Through this, structure and morphology control of TMDs can have high impact on their electronic, optical, and photo‐/electrocatalytic properties . Hence, methods for the controlled growth of complex TMD structures are in high demand …”
Section: Comparison Of Tafel Slopes Of Triangles and Dendritesmentioning
confidence: 99%
“…[ 22,23,27 ] The single‐layer TMDCs are readily transferrable [ 28 ] to a Si wafer or may be grown [ 29 ] directly onto a Si wafer, and the majority of TMDC‐based devices have been fabricated on the Si wafer. [ 30,31 ] Significant research efforts are also underway to develop strategies for compatibility with Si CMOS technologies. [ 32,33 ] Hence, the 2D TMDC family is a very compelling alternative for building solid‐state qubits.…”
Section: Introductionmentioning
confidence: 99%
“…[ 32,33 ] Hence, the 2D TMDC family is a very compelling alternative for building solid‐state qubits. Various groups [ 31,34–40 ] have therefore invested efforts (see for example the facilities highlighted in Figure ) to build electrostatically gated quantum dots in 2D TMDCs which could potentially lead to the development of qubits on the same platform. This report provides an update of the progress in this field.…”
Section: Introductionmentioning
confidence: 99%