Single-mode and single-frequency injection lasers (review)

Eliseev, P G; Shuikin, N N

doi:10.1070/qe1973v003n03abeh005104

Cited by 11 publications

(3 citation statements)

References 77 publications

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“…17a). In principle, multiple longitudinal modes in a Fabry-Perot cavity are competitive with each other and the one with the highest gain will dominate, but inhomogeneous gain saturation caused by spatial hole burning or crystal/cavity inhomogeneity can sustain multiple lasing modes 31,34 . The lasing threshold of 25 NW lasers studied varies between 220 nJ cm −2 and 600 nJ cm −2 .…”

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confidence: 99%

Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors

et al. 2015

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The remarkable performance of lead halide perovskites in solar cells can be attributed to the long carrier lifetimes and low non-radiative recombination rates, the same physical properties that are ideal for semiconductor lasers. Here, we show room-temperature and wavelength-tunable lasing from single-crystal lead halide perovskite nanowires with very low lasing thresholds (220 nJ cm(-2)) and high quality factors (Q ∼ 3,600). The lasing threshold corresponds to a charge carrier density as low as 1.5 × 10(16) cm(-3). Kinetic analysis based on time-resolved fluorescence reveals little charge carrier trapping in these single-crystal nanowires and gives estimated lasing quantum yields approaching 100%. Such lasing performance, coupled with the facile solution growth of single-crystal nanowires and the broad stoichiometry-dependent tunability of emission colour, makes lead halide perovskites ideal materials for the development of nanophotonics, in parallel with the rapid development in photovoltaics from the same materials.

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confidence: 99%

Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors

et al. 2015

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“…By this method, some control over the longitudinal [ l ] - [4] or transverse [SI (or both) mode patterns is obtained; this has already proved useful for some applications [ 6 ] . This paper describes results obtained by operating GaAs heterostructure lasers in an EC.…”

Section: Introductionmentioning

confidence: 97%

“…Armstrong and Smith [4] investigated the intensity fluctuations in the light emitted by a GaAs laser operated continuously near 10 K in the frequency range between 2 kHz and 10 MHz as a function of pumping current, and observed the fluctuation…”

Section: Introductionmentioning

confidence: 99%

The gain profile and time-delay effects in external-cavity-controlled GaAs lasers

Rossi

Hsieh

Heckscher

1975

IEEE J. Quantum Electron.

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An external dispersive cavity is used to map out the gain profile of single-heterostructue (SH), double-heterostructure (DH), and Iargeaptical-cavity (LOC) lasers. The variations in gain profile with dopant and device operating conditions are reported. With certain cavity arrangements, long time delays in DH devices are observed; thisshows that saturable absorption can be present in these as well as in all other types of GaAs diodes. A model combining saturable absorption with a breakdown in optical guiding makes it possible to consistently interpret all reported timedelay data for GaAs diffused-junction (DJ) and SH diode lasers, including Q-switching and abnormaldelay effects. Finally, experiments where two gratings are used to oscillate a diode simultaneously at two different, independently variable frequencies are described.

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High frequency intensity noise spectra of axial mode groups in the radiation from CW GaAIAs diode lasers

Jäckel

Guekos

1977

Opt Quant Electron

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Single-mode and single-frequency injection lasers (review)

Cited by 11 publications

References 77 publications

Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors

Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors

The gain profile and time-delay effects in external-cavity-controlled GaAs lasers

High frequency intensity noise spectra of axial mode groups in the radiation from CW GaAIAs diode lasers

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