Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal

Novikov, I. I.; Karachinsky, L. Ya.; Maximov, M. V.; Shernyakov, Yu. M.; Kuznetsov, Serguei; Gordeev, N. Yu.; Shchukin, V. A.; Kop’ev, P. S.; Ledentsov, N. N.; Ben-Ami, U.; Kalosha, V. P.; Sharon, André; Kettler, T.; Posilovic, K.; Bimberg, D.; Mikhelashvili, V.; Eisenstein, G.

doi:10.1063/1.2211948

Cited by 23 publications

(16 citation statements)

References 14 publications

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“…[8] experimentally demonstrated the narrow FF distribution with FWHM as narrow as 5 • by 16.5-μm-thick Bragg reflector with a mode shape of Shape I, the similar results can also be found in Refs. [7] and [9].…”

Section: Far-field Behaviormentioning

confidence: 97%

“…The dual-lobed or multi-lobed FF patterns were thought as the nature of dual-sided BRL, and attributed to the dualsided transverse Bragg resonance based on the quarter-wave (QtW) Bragg condition [14]. On the contrary, the narrow single-lobed FF patterns were considered as the unique advantage of single-sided BRLs [7][8][9]14]. It seems that the lobe characteristic of FF is determined by the single-sided or dual-sided BRW structure.…”

Section: Introductionmentioning

confidence: 97%

“…The single-sided BRLs or the so-called longitudinal photonic bandgap crystal (PBC) lasers demonstrate the ultra-narrow vertical beam divergence of about 5-8 • [7][8][9], which are promising for the application of high-brightness lasers. The dual-sided BRLs demonstrate the low threshold (∼157 A/cm 2 ) [10] and high temperature stability [11] with two separated lobes in the vertical far field (FF), which are favored for the phasematched nonlinear BRW [12,13].…”

Section: Introductionmentioning

confidence: 99%

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High power single-sided Bragg reflection waveguide lasers with dual-lobed far field

et al. 2012

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We report on 980-nm InGaAs/GaAs lasers with dual-lobed far field based on a single-sided Bragg reflection waveguide (BRW). The high slope efficiency ∼0.92 W/A and a continuous wave (CW) output power >1.5 W (3.2 W pulsed) have been obtained. The threshold current density is as low as 253 A/cm 2 for a 1.5-mm-long device and the transparency current density is only 140 A/cm 2 . The further analysis shows the intrinsic reason for the single-lobed or the dual-lobed far-field distribution is determined by the mode shape in the cavity, not the single-sided or dual-sided BRW structure. The condition to achieve a narrow singlelobed far-field distribution is discussed.

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Section: Far-field Behaviormentioning

confidence: 97%

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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High power single-sided Bragg reflection waveguide lasers with dual-lobed far field

et al. 2012

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“…Bellow we will focus on narrow 10 µm and 4 µm wide stripes [26]. The lateral far field patterns of 10 µm wide stripe laser with 1 mm cavity length are shown in Fig.…”

Section: Realization Of Visible Photonic Band Crystal Lasersmentioning

confidence: 99%

High brilliance photonic band crystal lasers

Shchukin

Ledentsov

Gordeev³

et al. 2006

SPIE Proceedings

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High concentration of optical power in a narrow exit angle is extremely important for numerous applications of laser diodes, for example, for low-cost fiber pumping and coupling, material processing, direct frequency conversion, etc. Lasers based on the longitudinal photonic band crystal (PBC) concept allow a robust and controllable extension of the fundamental mode over a thick multi-layer waveguide region to achieve a very large vertical optical mode spot size and, consequently, a very narrow vertical beam divergence. Many undesirable effects like beam filamentation, lateral multimode operation and catastrophic optical mirror damage (COMD) are strongly reduced. 650 nm GaInP/GaAlInP PBC lasers show narrow far field pattern (FWHM~7º) stable up to the highest output powers. Differential efficiency up to 85% is demonstrated. Total single mode output power as high as 150 mW is achieved in 4 µm-wide stripes in continuous wave operation, being limited by COMD due to not passivated facets. The lateral far field FWHM is 4 degrees. 840 nm GaAs/GaAlAs PBC lasers show a vertical beam divergence of 8 o (FWHM) and a high differential efficiency up to 95% (L=500 µm). A total single mode CW power approaches 500 mW for 1 mm-long 4 µm-wide stripes devices at ~500 mA current, being COMD-limited. The lateral far field FWHM is 5 degrees. Another realization of a longitudinal PBC laser allows lasing in a single high-order vertical mode, a so-called tilted mode, which provides wavelength selectivity and substantially extends the possibility to control the thermal shift of the lasing wavelength. In a multilayer laser structure, where the refractive index of each layer increases upon temperature, it is possible to reach both a red shift of the lasing wavelength for some realizations of the structures, and a blue shift for some others. Most important, the absolute thermal stabilization of the lasing wavelength of a semiconductor laser can be realized.

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“…The design allows robust lasing in a single vertical mode. Single vertical single lateral mode PBC lasers have been fabricated emitting light at different wavelengths [8][9][10][11][12][13][14], and showing a higher output power than conventional single mode edge-emitters. The maximum single mode cw power of 2 W was achieved for a 980 nm PBC laser [15].…”

Section: Introductionmentioning

confidence: 99%

Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers

et al. 2010

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The concepts, features, modeling and practical realizations of high power high brightness semiconductor diode lasers having ultrathick and ultrabroad waveguides and emitting in the single vertical single lateral mode are analyzed. Ultrathick vertical waveguide can be realized as a photonic band crystal with an embedded filter of high order modes. In a second approach a tilted wave laser enables leakage of the optical wave from the active waveguide to the substrate and additional feedback from the back substrate side. Both designs provide high power and low divergence in the fast and the slow axis, and hence an increased brightness. Lateral photonic crystal enables coherent coupling of individual lasers and the mode expansion over an ultrabroad lateral waveguide. Experimental results are presented. Obtained results demonstrate a possibility for further expansion of the concept and using the single mode diodes having an ultrabroad waveguide to construct single mode laser bars and stacks.

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Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal

Cited by 23 publications

References 14 publications

High power single-sided Bragg reflection waveguide lasers with dual-lobed far field

High power single-sided Bragg reflection waveguide lasers with dual-lobed far field

High brilliance photonic band crystal lasers

Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers

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