Abstract:Increasing the number of active regions is an effective approach for scaling optical output power in vertical cavity surface emitting lasers (VCSELs). However, due to a more complex cavity structure, these devices can exhibit simultaneous stimulation of multiple higher order transverse modes. This issue is further exacerbated especially in oxide confined VCSELs, in which the possible differences in length, shape, thickness, and composition of each oxide layer can give rise to stimulation of a higher order mode… Show more
We report on development of 1130nm oxide VCSELs based on InGaAs/GaAs active material system and AlGaAs distributed Bragg reflectors (DBRs). To our knowledge, this is the first report on the development of multijunction VCSELs at this wavelength.
We report on development of 1130nm oxide VCSELs based on InGaAs/GaAs active material system and AlGaAs distributed Bragg reflectors (DBRs). To our knowledge, this is the first report on the development of multijunction VCSELs at this wavelength.
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