Single Photon Avalanche Diode Collection Efficiency Enhancement via Peripheral Well-Controlled Field

Abstract

Single-photon avalanche diodes photon detection efficiency (PDE) and breakdown uniformity are studied. An approach to increase the PDE based on controlled breakdown of the peripheral region of the junction is described. Parameters influencing and controlling the peripheral region breakdown are discussed. A collection efficiency >60% is demonstrated, nearly twice that of a conventional, planar breakdown device.Index Terms-Avalanche breakdown, CMOS single-photon avalanche diode (SPAD), image sensors, photodiodes.

High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

“…In our device, N = 3, n is the refractive index of the coating (SiO 2 : ~1.47) 43 and the transmission is about 0.94. The carrier collection efficiency of Si/Ge UTC photodiodes is mainly determined by the design of the electric field inside the devices and by the recombination caused by defects inside the Ge layer and at the hetero-interface 44 45 . Absorption efficiency is generally dependent on the absorption coefficient and absorption length.…”

“…maximize the coupled light, the thickness of the top anti-reflection coating should be N•(λ/4n), according to destructive coherence inside the coating, where N is a positive integer, and n is the refractive index of the coating [40] . The carrier collection efficiency of Si/Ge UTC photodiodes is mainly determined by the design of the electric field inside the devices and by the recombination caused by defects inside the Ge layer and at the hetero-interface [41,42] .…”

A Full Parallel Event Driven Readout Technique for Area Array SPAD FLIM Image Sensors

“…Recently, compact photon counting devices have emerged, known as single-photon avalanche diodes (SPADs) [ 7 , 8 , 9 ]. As solid-state devices, SPADs can operate in normal atmosphere and at room temperature.…”