Single-Photon Avalanche Photodiode Based Fiber Optic Receiver for Up to 200 Mb/s

Steindl, Bernhard; Hofbauer, Michael; Schneider-Hornstein, Kerstin; Brandl, Paul; Zimmermann, Horst

doi:10.1109/jstqe.2017.2764682

Cited by 42 publications

(16 citation statements)

References 14 publications

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“…[ 147,148 ] Nevertheless, the actual exploitation of a very short dead time with CMOS SPADs is typically prevented by the rapid increase of the afterpulsing. [ 149 ]…”

Section: Fabrication Technologiesmentioning

confidence: 99%

Recent Advances and Future Perspectives of Single‐Photon Avalanche Diodes for Quantum Photonics Applications

et al. 2020

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Photonic quantum technologies promise a revolution of the world of information processing, from simulation and computing to communication and sensing, thanks to the many advantages of exploiting single photons as quantum information carriers. In this scenario, single‐photon detectors play a key role. On the one hand, superconducting nanowire single‐photon detectors (SNSPDs) are able to provide remarkable performance on a broad spectral range, but their applicability is often limited by the need of cryogenic operating temperatures. On the other hand, single‐photon avalanche diodes (SPADs) overcome the intrinsic limitations of SNSPDs by providing a valid alternative at room temperature or slightly below. In this paper, the authors review the fundamental principles of the SPAD operation and provide a thorough discussion of the recent progress made in this field, comparing the performance of these devices with the requirements of the quantum photonics applications. In the end, the authors conclude with their vision of the future by summarizing prospects and unbeaten paths that can open new perspectives in the field of photonic quantum information processing.

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“…[ 147,148 ] Nevertheless, the actual exploitation of a very short dead time with CMOS SPADs is typically prevented by the rapid increase of the afterpulsing. [ 149 ]…”

Section: Fabrication Technologiesmentioning

confidence: 99%

Recent Advances and Future Perspectives of Single‐Photon Avalanche Diodes for Quantum Photonics Applications

et al. 2020

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“…Recently, many multi-pixel image sensors with SPADs were published [ 12 , 13 , 14 , 15 , 16 , 17 ], some for 3D imaging. SPAD arrays have potential for highly sensitive optical data receivers [ 18 , 19 , 20 , 21 ]. Typically, the bit error rate (BER) of SPAD receivers suffers from DCR and APP.…”

Section: Introductionmentioning

confidence: 99%

Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes

2020

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Two types of single-photon avalanche diodes (SPADs) with different diameters are investigated regarding their avalanche behavior. SPAD type A was designed in standard 0.35-µm complementary metal-oxide-semiconductor (CMOS) including a 12-µm thick p- epi-layer with diameters of 50, 100, 200, and 400 µm; and type B was implemented in the high-voltage (HV) line of this process with diameters of 48.2 and 98.2 µm. Each SPAD is wire-bonded to a 0.35-µm CMOS clocked gating chip, which controls charge up to a maximum 6.6-V excess bias, active, and quench phase as well as readout during one clock period. Measurements of the cathode voltage after photon hits at SPAD type A resulted in fall times (80 to 20%) of 10.2 ns for the 50-µm diameter SPAD for an excess bias of 4.2 V and 3.45 ns for the 200-µm diameter device for an excess bias of 4.26 V. For type B, fall times of 8 ns for 48.2-µm diameter and 5.4-V excess bias as well as 2 ns for 98.2-µm diameter and 5.9-V excess bias were determined. In measuring the whole capacitance at the cathode of the SPAD with gating chip connected, the avalanche currents through the detector were calculated. This resulted in peak avalanche currents of, e.g., 1.19 mA for the 100-µm SPAD type A and 1.64 mA for the 98.2-µm SPAD type B for an excess bias of 5 and 4.9 V, respectively.

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“…Countless applications, such as fluorescence microscopy [1], distance sensing [2], data communication [3,4], quantum cryptography [5], and positron emission tomography (PET) [6], require the capability of detecting very low amounts of light. Photo multiplier tubes (PMT) were very successful in the past, as they are capable of detecting single photons.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 μm CMOS

2018

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The temperature dependence of a single-photon avalanche diode (SPAD) with an integrated quencher in 0.35 μm CMOS is investigated. While the dark count rate strongly decreases with decreasing temperature, the after-pulsing probability (APP) does not change a lot in the investigated temperature range from −40°C to 50°C, although the dead time of the active quenching circuit (AQC) is only 9.5 ns. This and the measured histograms of the interarrival time (IAT) suggest that the traps involved have a very short lifetime, which is not strongly temperature dependent, or alternatively that the traps are not the main source of after pulses in the investigated device. Consequently, it may be necessary to find another explanation for the after pulses.

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Single-Photon Avalanche Photodiode Based Fiber Optic Receiver for Up to 200 Mb/s

Cited by 42 publications

References 14 publications

Recent Advances and Future Perspectives of Single‐Photon Avalanche Diodes for Quantum Photonics Applications

Recent Advances and Future Perspectives of Single‐Photon Avalanche Diodes for Quantum Photonics Applications

Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes

Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 μm CMOS

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