2001
DOI: 10.1143/jjap.40.2058
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Single Photon Detection with a Quantum Dot Transistor

Abstract: We propose and demonstrate a type of GaAs/AlGaAs modulation-doped field effect transistor (FET) which is sensitive to single photons. The FET contains a layer of InAs quantum dots formed using an in-situ, self-organising method, adjacent to the channel and separated from it by a thin AlGaAs barrier. Capture of a single photo-excited carrier by a quantum dot leads to a sizeable change in the source-drain current through the transistor, allowing the detection of a single photon. We show this is because the mobil… Show more

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Cited by 44 publications
(19 citation statements)
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“…21 In devices in which the active region contains just a few hundred quantum dots, these interactions are strong enough to result in a small increase in the current through the channel when a photogenerated hole recombines with an electron trapped in a dot. 20 This response is detectable to temperatures of at least 77 K. 22 Detection of a single photon results therefore in a step in the source-drain current. In order to convert such steps into voltage peaks, we used the amplifier shown in Fig.…”
mentioning
confidence: 99%
“…21 In devices in which the active region contains just a few hundred quantum dots, these interactions are strong enough to result in a small increase in the current through the channel when a photogenerated hole recombines with an electron trapped in a dot. 20 This response is detectable to temperatures of at least 77 K. 22 Detection of a single photon results therefore in a step in the source-drain current. In order to convert such steps into voltage peaks, we used the amplifier shown in Fig.…”
mentioning
confidence: 99%
“…Current proposals for single photon sources include exciton quantum dots [ll-131, NV centres [14, 151, and surface acoustic wave devices [16]. Current proposals for detectors range from novel mesoscopic electronic devices [17], and supereonducting devices [ 181 to novel systems that use stimulated Raman scattering [19,201 and E I T [21].…”
Section: Discussionmentioning
confidence: 99%
“…One critical component of nano-photonic integrated circuits will be nano-scale, super-sensitive single-photon detection and emission devices that require low-power. The unique opto-electronic properties of quantum dots (QDs) have been shown to improve performance in traditional devices like FET's [2], and photodetectors [3], but using quantum dots as individual devices has been largely unexplored. This is due, in part, to fabrication and scaling issues at the nano-scale.…”
Section: Introductionmentioning
confidence: 99%