Single photon emission from InGaN/GaN quantum dots up to 50 K

Kremling, Stefan; Tessarek, Christian; Dartsch, H.; Figge, S.; Höfling, Sven; Worschech, L.; Kruse, C.; Hommel, D.; Forchel, A.

doi:10.1063/1.3683521

Cited by 41 publications

(25 citation statements)

References 16 publications

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“…[32] We would like to note that QD-like PL has been observed up to room temperature in our QDs. [22] Note also that for InGaN QDs with similar material compositions, high temperature single-photon emission has been reported for a self-assembled InGaN/GaN QD up to 50 K. [34] This suggests that even though our fabrication approach involves free surfaces, the optical quality is at least comparable to the highest quality self-assembled InGaN QDs with similar QD-barrier band offsets.…”

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confidence: 68%

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Single photon emission from site-controlled InGaN/GaN quantum dots

Zhang

Teng

Hill

et al. 2013

Applied Physics Letters

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Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The singlephoton nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%-25% exhibited single photon emission at 10 K.Semiconductor quantum dots (QDs) have diverse quantum photonic applications [1,2] [2] However, most work to date has been based on self-assembled QDs in III-As and III-P materials, which face severe limitations in operating temperature and scalability. III-As and III-P QDs typically operate at cryogenic temperatures due to the relatively small exciton binding energies and QD-barrier band offsets. Furthermore, self-assembled QDs are formed at random locations and suffer from large inhomogeneity in size and spectral distribution, which prevents controlled coupling of multiple QDs or coupling of QDs with cavities. In this letter, we report single photon emission from sitecontrolled single InGaN/GaN QDs that are scalable for manufacturing and can be readily integrated with cavities.To achieve cryo-free operation, III-N QDs with large QD-barrier band offsets and exciton binding energies have emerged as one of the most promising solutions. Single photon emission has been reported up to 200 K, although only in a self-assembled GaN/AlN QD[10] and an InGaN QD in a self-organized AlGaN nanowire. [11] To control the position of a III-N QD, various approaches have been explored. [12][13][14][15][16][17][18] To date, QD-like emission has only been reported from dots formed at the apex of a sitecontrolled GaN pyramid [12,17] and dots at the top of a site-controlled AlGaN nanowire.[18] But no single photon emission has been reported from these systems yet.In this work, we fabricated site-controlled InGaN/GaN QDs by dry etching of a planar single quantum well * dengh@umich.edu † peicheng@umich.edu (QW). This structure has been applied to III-As systems but with very limited success, due to the detrimental surface effects introduced by the etched sidewall. [19] In contrast, the surface recombination velocity of III-N is 2-3 orders of magnitude slower than that of IIIAs. [20,21] Bright luminescence has been observed from ensembles of III-N nano-pillars etched from multiple QW structures, [13][14][15] and from a single quantum disk at the room temperature.[22] Yet no clear evidence of single photon emission from these structures have been reported so far. Here we not only show single photon emission from our lithographically defined, scalable single InGaN/GaN QDs but also show that this quantum phenomenon survives at temperatures up to 90...

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confidence: 68%

“…[34] However, unlike self-assembled QDs, we have control over not only the positioning but also all key structural parameters of our InGaN QDs, including the disk thickness l, the disk diameter D, and the indium mole fraction x, limited only by the present MOCVD growth and electron-beam lithography technologies, as will be discussed below.…”

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confidence: 99%

Single photon emission from site-controlled InGaN/GaN quantum dots

Zhang

Teng

Hill

et al. 2013

Applied Physics Letters

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“…S ince the early demonstration of a quantum dot (QD) singlephoton source [1][2][3][4][5] , there have been numerous reports on single-photon emission in a wide range of temperatures, with or without the use of a microcavity and with optical or electrical excitation [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] . Generally, the electrically driven singlephoton emitters are all-epitaxial heterostructures.…”

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confidence: 99%

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

et al. 2013

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In a classical light source, such as a laser, the photon number follows a Poissonian distribution. For quantum information processing and metrology applications, a non-classical emitter of single photons is required. A single quantum dot is an ideal source of single photons and such single-photon sources in the visible spectral range have been demonstrated with III-nitride and II-VI-based single quantum dots. It has been suggested that shortwavelength blue single-photon emitters would be useful for free-space quantum cryptography, with the availability of high-speed single-photon detectors in this spectral region. Here we demonstrate blue single-photon emission with electrical injection from an In 0.25 Ga 0.75 N quantum dot in a single nanowire. The emitted single photons are linearly polarized along the c axis of the nanowire with a degree of linear polarization of B70%.

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“…3 To obtain an emission of strongly linearly polarized photons in this material system, complicated micro cavity structures with a polarized optical mode in resonance with a QD emission line are needed. 4,5 Highly linearly polarized emission has been reported for various bare QDs based on Al,In,Ga-nitrides, including SK grown QDs, 6 QDs etched out from a planar single quantum well (QW), 7 and QDs formed in nanorods. 8 However, none of these studies reports any controlled or preferential polarization direction.…”

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confidence: 99%

Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot

Jemsson

Machhadani

Karlsson

et al. 2014

Applied Physics Letters

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We report on the observation of linearly polarized single photon antibunching in the excitonic emission from a site-controlled InGaN quantum dot. The measured second order coherence function exhibits a significant dip at zero time difference, corresponding to g(m)(2) (0) = 0: 90 under continuous laser excitation. This relatively high value of g(m)(2) (0) is well understood by a model as the combination of short exciton life time (320 ps), limited experimental timing resolution and the presence of an uncorrelated broadband background emission from the sample. Our result provides the first rigorous evidence of InGaN quantum dot formation on hexagonal GaN pyramids, and it highlights a great potential in these dots as fast polarized single photon emitters if the background emission can be eliminated.

Funding Agencies|Carl Trygger Foundation for Scientific Research; Swedish Research Council (VR); Nano-N consortium - Swedish Foundation for Strategic Research (SSF); Knut and Alice Wallenberg Foundation; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Font-D, at Linkoping University

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Single photon emission from InGaN/GaN quantum dots up to 50 K

Cited by 41 publications

References 16 publications

Single photon emission from site-controlled InGaN/GaN quantum dots

Single photon emission from site-controlled InGaN/GaN quantum dots

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot

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