Single photon emitters in boron nitride: More than a supplementary material

Koperski, Maciej; Nogajewski, Karol; Potemski, M.

doi:10.1016/j.optcom.2017.10.083

Cited by 46 publications

(45 citation statements)

References 39 publications

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“…Such narrow ZPLs have been seen frequently in h-BN layers and were attributed to the presence of point-like defects, which confine electronic levels deep within the band gap and act as recombination centers, resulting in non-classical light emission 2,6 . For each location on the sample, we observe a unique pattern of PL peaks spanning across a large spectral band of~900 meV (Supplementary Note 2), in agreement with previous reports for h-BN flakes 6,7,11 , powder 12 and epitaxially grown films 24 . We then performed a more detailed study of the photophysical properties of the PL peaks from Fig.…”

Section: Resultssupporting

confidence: 90%

“…Moreover, these as well as other lines appearing in the emission spectrum at different energies have their own intrinsic direction of polarization axes. This suggests that the linear polarization of the PL signal most likely originates from the particular anisotropic structure of the emission center 8,12 .…”

Section: Resultsmentioning

confidence: 99%

“…The suppression of the coincidence rate at zero time delay (τ = 0) reflects the reduced probability of simultaneous multiple photon emission (i.e., photon antibunching). The residual counts at τ = 0 are due to the background signal from the h-BN powder 12 . The single-photon performance was quantified by fitting the experimental data using a three-level system model 27 , which has been typically used to describe single-photon emission in h-BN.…”

Section: Resultsmentioning

confidence: 99%

“…The atom-like deep-level defects in h-BN have recently emerged as prominent candidates for single-photon emission. Although their microscopic nature is still under debate, these luminescent centers have been proven to be extremely robust, high-temperature, linearly polarized and ultra-bright sources of non-classical (i.e., antibunched) light [3][4][5][6][7][8][9][10][11][12][13] . The prominence of single-photon emitters (SPEs) in h-BN is, however, hindered by the emitter-to-emitter wavelength variability, which covers a broad range in the visible and near-infrared spectrum 6,7,[9][10][11][12][13] .…”

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Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride

et al. 2019

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Luminescent defects in hexagonal boron nitride (h-BN) have recently emerged as a promising platform for non-classical light emission. On-chip solutions, however, require techniques for controllable in-situ manipulation of quantum light. Here, we demonstrate the dynamic spectral and temporal tuning of the optical emission from h-BN via moving acoustomechanical modulation induced by stimulated phonons. When perturbed by the propagating acoustic phonon, the optically probed radiative h-BN defects are periodically strained and their sharp emission lines are modulated by the deformation potential coupling. This results in an acoustically driven spectral tuning within a 2.5-meV bandwidth. Our findings, supported by first-principles theoretical calculations, reveal exceptionally high elasto-optic coupling in h-BN of~50 meV/%. Temporal control of the emitted photons is achieved by combining the acoustically mediated fine-spectral tuning with spectral detection filtering. This study opens the door to the use of sound for scalable integration of h-BN emitters in nanophotonic and quantum information technologies.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride

et al. 2019

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“…In this section, we review magneto-optical studies on SPEs in h-BN. Traditionally, non-magnetic SPEs involving singlet ground states, possibly intrinsic to a single defect or else from spin-coupled adjacent paired defects, have been associated as possible Group 2 emitters 37,112 . A recent study also reported no change in the optical spectra of h-BN defects with the application of a magnetic field 112 .…”

Section: Magnetic States For Quantum Device Applicationsmentioning

confidence: 99%

Single-photon emitters in hexagonal boron nitride: a review of progress

2020

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This report summarizes progress made in understanding properties such as zerophonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.

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Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

et al. 2020

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Atomically thin hexagonal boron nitride (h‐BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D‐material‐based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h‐BN is found to be a natural hyperbolic material in the mid‐infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h‐BN flakes at their proof‐of‐concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large‐scale, high‐quality, atomically thin h‐BN films and heterostructures. Herein, CVD synthesis of atomically thin h‐BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single‐crystal h‐BN film. Meanwhile, epitaxial growth of 2D materials onto h‐BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h‐BN and its heterostructures in optoelectronics and electronics are summarized.

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Single photon emitters in boron nitride: More than a supplementary material

Cited by 46 publications

References 39 publications

Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride

Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride

Single-photon emitters in hexagonal boron nitride: a review of progress

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

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