Single-photon generation from a nitrogen impurity center in GaAs

Ikezawa, Michio; Sakuma, Yoshiki; Liao, Zaiyi; Sone, Yosinori; Mori, Tatsuya; Hamano, Takenobu; Watanabe, M.; Sakoda, Kazuaki; Masumoto, Yasuaki

doi:10.1063/1.3679181

Cited by 25 publications

(34 citation statements)

References 21 publications

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“…A different approach has recently emerged by using photons antibunched from individual extrinsic centers in different semiconductor materials. 8,9 In particular, single-photon emission from neutral excitons has been demonstrated from a single nitrogen-vacancy center in diamond, 8,9 nitrogen bound-excitons in ZnSe, 10 Te pairs in ZnSe, 11 F impurity in ZnMgSe/ZnSe quantum-well nanostructures, 12 single N centers in GaAs, 13 and extrinsic centers in AlGaAs. 14 An important difference with QDs is that single impurity centers are usually not able to confine two excitons: as an example we are not aware of biexcitons in nitrogen-vacancy centers in diamond.…”

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confidence: 99%

Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

Sarti

Muñoz‐Matutano

Bauer

et al. 2013

Journal of Applied Physics

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The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device.

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confidence: 99%

Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

Sarti

Muñoz‐Matutano

Bauer

et al. 2013

Journal of Applied Physics

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“…Thus, (In)GaAsN is expected to be a semiconductor material for optoelectronic device applications, such as long‐wavelength semiconductor lasers with superior characteristics and high efficiency solar cells . In addition to the band gap reduction, sharp emission lines are obtained from isoelectronic traps due to nitrogen–nitrogen (NN) pairs in dilute GaAsN alloys, which are promising candidates for generating single photons or entangled photon pairs .…”

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confidence: 99%

Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys

Okubo

Yagi

Hijikata

et al. 2014

Physica Status Solidi (a)

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We have studied the temperature dependence of optical transitions in dilute GaAsN alloys using photoreflectance (PR). A delocalized‐state transition is clearly observed in PR spectra while several localized‐state emission lines due to isoelectronic centers appear in photoluminescence spectra. The energy of optical transitions observed in PR spectra is in agreement with the excitonic transition energy in photoluminescence excitation spectra, clearly showing that the optical transitions in PR spectra are excitonic transitions. We analyzed the temperature dependence of the excitonic transition energies using the Bose–Einstein statistical expression, and found that even dilute alloys follow the same trend as GaAsN alloys with higher nitrogen concentrations. We discuss the coexistence of localized and delocalized states in dilute GaAsN alloys in terms of the random distribution of N atoms.

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“…The system allows us to observe a single luminescence center more than 15 hours with negligible drift. Excitation light source was a semiconductor laser emitting at 405 nm.As shown in Fig.1 (a), photoluminescence (PL) spectrum of the sample shows a broad and rough luminescence band below 1510 meV at 5 K. The band arises from localized states and consists of many sharp lines, which correspond to PL from individual nitrogen centers [4]. The origin of the inhomogeneously broadened luminescence center is not understood well, and they are temporary assigned to NN pairs.…”

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confidence: 98%

“…Nitrogen isoelectronic impurity in III-V compound semiconductor [1,2] is one of such promising candidates. Recently, single photon generation has been demonstrated for GaP:N [3] and GaAs:N [4]. In these materials, a nitrogen atom substitutes for a phosphorous site or an arsenic site, attracting an electron due to its strong electronegativity.…”

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confidence: 99%

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Fourier spectroscopy of individual nitrogen impurity centers in GaAs

Ikezawa¹,

Liao²,

Sakuma³

et al. 2013

AIP Conference Proceedings

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We report on the measurement of the exciton homogeneous linewidth in nitrogen impurity centers in GaAs:N. Fourier spectroscopy on a single center revealed a long coherence time over 300 ps at low temperature. The narrowest linewidth obtained at liquid helium temperature is 3.5 μeV, which is comparable with that of semiconductor quantum dots. The linewidth increases with increasing temperature, showing a thermally activated behavior with activation energies of 2∼5 meV.Single impurity centers in semiconductors have attracted significant attention because of their potential application as non-classical light sources, such as single photon source or indistinguishable photon source. Nitrogen isoelectronic impurity in III-V compound semiconductor [1, 2] is one of such promising candidates. Recently, single photon generation has been demonstrated for GaP:N[3] and GaAs:N[4]. In these materials, a nitrogen atom substitutes for a phosphorous site or an arsenic site, attracting an electron due to its strong electronegativity. Then a hole is attracted by the electron by the Coulomb interaction. The resulting bound exciton shows bright and sharp luminescence.Knowledge of the dephasing is of particular importance for sophisticated application such as photon interference [5,6,7,8], which is a key mechanism to achieve entanglement between remote qubits [9]. So far the coherence time T 2 or the homogeneous linewidth Γ h , given by the inverse coherence time, has never been studied for nitrogen luminescence centers in GaAs:N. In this work, we report on the exciton homogeneous linewidth in nitrogen impurity centers in GaAs:N measured by Fourier spectroscopy on a single center, and discuss the temperature dependence.The nitrogen delta-doped GaAs sample is the same one used in ref. [4]. The sample was kept in a homemade confocal microscope system which was inserted in a helium-bath cryostat. A hemispherical solid immersion lens was attached to the sample surface to improve the spatial resolution and the collection efficiency. The system allows us to observe a single luminescence center more than 15 hours with negligible drift. Excitation light source was a semiconductor laser emitting at 405 nm.As shown in Fig.1 (a), photoluminescence (PL) spectrum of the sample shows a broad and rough luminescence band below 1510 meV at 5 K. The band arises from localized states and consists of many sharp lines, which correspond to PL from individual nitrogen centers [4]. The origin of the inhomogeneously broadened luminescence center is not understood well, and they are temporary assigned to NN pairs. A single center was spatially selected by the mode field diameter of a single mode fiber and spectrally selected by a narrow band-pass filter whose central wavelength is about 827 nm. The emitted single photons were sent to a MachZehnder interferometer through the single mode optical fiber and detected by a Si avalanche photodiode singlephoton counting module. The autocorrelation function was obtained by scanning the path length of an optical arm of t...

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Single-photon generation from a nitrogen impurity center in GaAs

Cited by 25 publications

References 21 publications

Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys

Fourier spectroscopy of individual nitrogen impurity centers in GaAs

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