Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment

Abstract

HIGHLIGHTS • Theory of electrically driven single-photon sources based on color centers in silicon carbide p-in diodes. • New method of determining the electron and hole capture cross sections by an optically active point defect (color center) from the experimental measurements of the single-photon electroluminescence rate and second-order coherence. • The developed method is based on the measurements at the single defect level. Therefore, in contrast to other approaches, one point defect is sufficient to measure its electron and hole capture cross sections.

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

“…Vice versa, if the densities of electrons and holes in the vicinity of the color center are known, it is possible to determine the electron and hole capture cross-sections by the color center by measuring the SPEL rate and the g (2) -function. [122] If the radiative transition from the excited level to the ground level of the color center under electrical excitation is accompanied by the non-radiative transition through a shelving state with a lifetime of more than a few tens of nanoseconds, the g (2) -function is given by a three-exponential function, as discussed above. In this case, it is not possible to obtain a tractable analytical expression.…”

“…emitted by the color center per second. [122] However, this is not a fundamental limitation, as shown in ref. [98].…”

Silicon Carbide Photonics Bridging Quantum Technology

“…The role of SiC in emerging quantum technologies , will be the focus of the last section. We will describe the optically and electrically driven quantum emitters originating from color centers ,− and the current main challenges to achieve ideal single photon emission in this material, including their emission enhancement via material nanostructuring and their spectral and charge control in electrical devices . Specifically, we will explain the role of SiC quantum emitters as spin-photon interfaces , for remote quantum entanglement, quantum gates, and quantum photonics. ,, We will also introduce novel applications and technologies in quantum sensing of the magnetic field, − electric field, − temperature, − and strain. ,− For quantum sensing applications, photonics can play a central role in enhancing the sensitivity and acquisition time of otherwise weak quantum processes and to improve integration and scalability of future devices.…”

Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions

“…[9][10][11] The optical emission of SiV À centers exhibits a narrow ZPL width at room temperature that concentrates more than 70% of its signals, 12,13 which is a promising candidate for the application of a room-temperature single photon source. [14][15][16] And their different charged states could be mutually switched to each other. Therefore, reliable methods to improve the population of the negatively charged color centers are urgently needed.…”