Single Pulse Calibration of Magnetic Field Sensors Using Mobile 43 kJ Facility

Grainys, Audrius; Novickij, Jurij; Stankevič, Tomaš; Stankevič, Voitech; Novickij, Vitalij; Žurauskienė, N.

doi:10.1515/msr-2015-0033

Cited by 9 publications

(3 citation statements)

References 14 publications

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“…7 . The pulses have been measured using a calibrated B-dot sensor, which was positioned in the center of the coil for the axial magnetic field measurement 62 (VGTU, Lithuania). For pulse acquisition the DPO4034 digital oscilloscope (Tektronix, Oregon, USA) was used, the data was post-processed using OriginPro software (OriginLab, Northhampton, MA, USA).…”

Section: Methodsmentioning

confidence: 99%

Pulsed Electromagnetic Field Assisted in vitro Electroporation: A Pilot Study

Novickij

Grainys

Lastauskienė

et al. 2016

Sci Rep

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Electroporation is a phenomenon occurring due to exposure of cells to Pulsed Electric Fields (PEF) which leads to increase of membrane permeability. Electroporation is used in medicine, biotechnology, and food processing. Recently, as an alternative to electroporation by PEF, Pulsed ElectroMagnetic Fields (PEMF) application causing similar biological effects was suggested. Since induced electric field in PEMF however is 2–3 magnitudes lower than in PEF electroporation, the membrane permeabilization mechanism remains hypothetical. We have designed pilot experiments where Saccharomyces cerevisiae and Candida lusitaniae cells were subjected to single 100–250 μs electrical pulse of 800 V with and without concomitant delivery of magnetic pulse (3, 6 and 9 T). As expected, after the PEF pulses only the number of Propidium Iodide (PI) fluorescent cells has increased, indicative of membrane permeabilization. We further show that single sub-millisecond magnetic field pulse did not cause detectable poration of yeast. Concomitant exposure of cells to pulsed electric (PEF) and magnetic field (PMF) however resulted in the increased number PI fluorescent cells and reduced viability. Our results show increased membrane permeability by PEF when combined with magnetic field pulse, which can explain electroporation at considerably lower electric field strengths induced by PEMF compared to classical electroporation.

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Section: Methodsmentioning

confidence: 99%

Pulsed Electromagnetic Field Assisted in vitro Electroporation: A Pilot Study

Novickij

Grainys

Lastauskienė

et al. 2016

Sci Rep

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“…Magnetoresistance ( MR ) was defined as MR (%) = 100 × [ ρ ( B )/ ρ 0 − 1], where ρ ( B ) and ρ 0 represent the resistivity at magnetic-flux density B and without a magnetic field, respectively. The MR vs. B dependences were studied within a temperature range of 80–300 K using both an electromagnet with a permanent magnetic field of up to 0.7 T and a non-destructive pulsed magnet generating magnetic fields of up to 10 T through a multi-shot magnetic-field coil [ 35 ]. For the measurement of magnetic-relaxation processes following the switch-off of the magnetic-field pulse, a specially fabricated coil with a non-metallic outer casing made of polyamide was used to enable the rapid switch-off of the magnetic pulse [ 36 ].…”

Section: Methodsmentioning

confidence: 99%

Magnetoresistance and Magnetic Relaxation of La-Sr-Mn-O Films Grown on Si/SiO2 Substrate by Pulsed Injection MOCVD

Žurauskienė

Rudokas

Tolvaišienė

2023

Sensors

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The results of magnetoresistance (MR) and resistance relaxation of nanostructured La1−xSrxMnyO3 (LSMO) films with different film thicknesses (60–480 nm) grown on Si/SiO2 substrate by the pulsed-injection MOCVD technique are presented and compared with the reference manganite LSMO/Al2O3 films of the same thickness. The MR was investigated in permanent (up to 0.7 T) and pulsed (up to 10 T) magnetic fields in the temperature range of 80–300 K, and the resistance-relaxation processes were studied after the switch-off of the magnetic pulse with an amplitude of 10 T and a duration of 200 μs. It was found that the high-field MR values were comparable for all investigated films (~−40% at 10 T), whereas the memory effects differed depending on the film thickness and substrate used for the deposition. It was demonstrated that resistance relaxation to the initial state after removal of the magnetic field occurred in two time scales: fast’ (~300 μs) and slow (longer than 10 ms). The observed fast relaxation process was analyzed using the Kolmogorov–Avrami–Fatuzzo model, taking into account the reorientation of magnetic domains into their equilibrium state. The smallest remnant resistivity values were found for the LSMO films grown on SiO2/Si substrate in comparison to the LSMO/Al2O3 films. The testing of the LSMO/SiO2/Si-based magnetic sensors in an alternating magnetic field with a half-period of 22 μs demonstrated that these films could be used for the development of fast magnetic sensors operating at room temperature. For operation at cryogenic temperature, the LSMO/SiO2/Si films could be employed only for single-pulse measurements due to magnetic-memory effects.

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“…The high pulsed magnetic field generator consists of high voltage power supply, capacitor bank, high power switch and a special multi-shot magnetic field coil (inductor). The high-field facilities were designed and are used for the investigations of properties of different materials in high magnetic fields at the Center for Physical Sciences and Technology in Vilnius, Lithuania 49 .…”

Section: Methodsmentioning

confidence: 99%

Room temperature Co-doped manganite/graphene sensor operating at high pulsed magnetic fields

Lukose

Žurauskienė

Stankevič

et al. 2019

Sci Rep

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The demand to increase the sensitivity to magnetic field in a broad magnetic field ranges has led to the research of novel materials for sensor applications. Therefore, the hybrid system consisting of two different magnetoresistive materials – nanostructured Co-doped manganite La 1−x Sr x (Mn 1−y Co y ) z O 3 and single- and few-layer graphene – were combined and investigated as potential system for magnetic field sensing. The negative colossal magnetoresistance ( CMR ) of manganite-cobaltite and positive one of graphene gives the possibility to increase the sensitivity to magnetic field of the hybrid sensor. The performed magnetoresistance ( MR ) measurements of individual few layer (n = 1–5) graphene structures revealed the highest MR values for three-layer graphene (3LG), whereas additional Co-doping increased the MR values of nanostructured manganite films. The connection of 3LG graphene and Co-doped magnanite film in a voltage divider configuration significantly increased the sensitivity of the hybrid sensor at low and intermediate magnetic fields (1–2 T): 70 mV/VT of hybrid sensor in comparison with 56 mV/VT for 3LG and 12 mV/VT for Co-doped magnanite film, respectively, and broadened the magnetic field operation range (0.1–20) T of the produced sensor prototype.

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Single Pulse Calibration of Magnetic Field Sensors Using Mobile 43 kJ Facility

Cited by 9 publications

References 14 publications

Pulsed Electromagnetic Field Assisted in vitro Electroporation: A Pilot Study

Pulsed Electromagnetic Field Assisted in vitro Electroporation: A Pilot Study

Magnetoresistance and Magnetic Relaxation of La-Sr-Mn-O Films Grown on Si/SiO2 Substrate by Pulsed Injection MOCVD

Room temperature Co-doped manganite/graphene sensor operating at high pulsed magnetic fields

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