Single-pulse excimer laser nanostructuring of silicon: A heat transfer problem and surface morphology

Eizenkop, Julia; Avrutsky, Ivan; Georgiev, Daniel G.; Chaudchary, Vipin

doi:10.1063/1.2910196

Cited by 23 publications

(13 citation statements)

References 17 publications

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“…The last one has been observed on SOI structure after irradiation by focused laser beam. 26 The fast solidification mechanism has been proposed for explanation of micro-structure formation. We propose the following mechanism of "tree ring" micro-cones' formation on the surface of SiGe sample: after irradiation of the sample by the laser Ge atoms are concentrated at the irradiated surface due to high gradient of temperature.…”

Section: Experiments On Si 1−x Ge Xmentioning

confidence: 99%

Nano-Cones Formation on a Surface of Ge, Si Crystals and Si1−xGex Solid Solution by Laser Radiation

Medvíd¹,

Onufrijevs²,

Lyutovich³

et al. 2011

J. Nanosci. Nanotech.

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The study of self-assembling nano-cones induced by irradiation of nanosecond Nd:YAG laser pulses on a surface of a Si1-xGe(x) solid solution is reported. It is shown that dynamics of nano-cones formation depends on concentration of Ge atoms (x) in Si lattice and on the intensity of laser radiation. Two different processes of nano-cones formation depending on x are observed. The first one-at higher concentration of Ge atoms x = 0.3-0.4 and the second one-at lower concentration of Ge atoms at x = 0.15 take place. At the first stage, similar processes of nano-cones formation occur. It means, at low intensity of laser radiation 1 < 2.0 MW/cm2 Ge atoms drift to the irradiated surface due to Thermo-gradient effect and Ge-rich phase is formed for both concentration ranges. The second stage is different for low and high Ge content ranges. At the higher concentration of Ge atoms and intensity of laser radiation 1 > 2.0 MW/cm2 nano-cones formation takes place by Stransky-Krastanov mode. On the same time, at lower concentration of Ge atoms cones look like "tree ring" growth due to melting of Ge separated islands on the irradiated surface at intensity of laser radiation 1 = 20 MW/cm2.

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Section: Experiments On Si 1−x Ge Xmentioning

confidence: 99%

Nano-Cones Formation on a Surface of Ge, Si Crystals and Si1−xGex Solid Solution by Laser Radiation

Medvíd¹,

Onufrijevs²,

Lyutovich³

et al. 2011

J. Nanosci. Nanotech.

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“…15,17,18 In this and other previous work, the role of the substrate in terms of any substrate melting and/or deformation is not considered. 15,17,18 In this and other previous work, the role of the substrate in terms of any substrate melting and/or deformation is not considered.…”

Section: The Role Of the Substrate And Any Substrate Meltingmentioning

confidence: 99%

“…This process relies on two main factors such as 15,17,18 the predominantly lateral heat flow upon solidification of the lasermelted silicon and the anomalous higher volume density of liquid silicon with respect to solid silicon ͑whether crystalline or amorphous͒. The main process is thought to be material transport, where the molten silicon moves toward the center of the irradiated spot.…”

Section: The Formation Mechanismmentioning

confidence: 99%

“…Recently, it was shown that excimer laser irradiation of silicon thin films results in the formation of conical nanotips, 15-18 while a similar approach was used to form nanotips on bulk silicon. [15][16][17][18] The formation of these tips may also be enhanced by surface tension forces within the liquid pool of silicon as described in Refs. In previ-ous work, 19,20 it was proposed that the formation of similar structures in bulk silicon is a result of the fact that the density of liquid Si, l = 2.52 g / cm 3 , is larger than that of solid Si, s = 2.32 g / cm 3 .…”

Section: Introductionmentioning

confidence: 99%

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Formation of conical silicon tips with nanoscale sharpness by localized laser irradiation

Moening

Georgiev

2010

Journal of Applied Physics

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The formation of conical silicon tips with nanoscale sharpness as a result of single-pulse localized laser irradiation is presented in this work. A Q-switched neodymium doped yttrium aluminum garnet nanosecond-pulse laser, emitting at its fourth harmonic of 266 nm, and a mask projection technique were used to generate circular laser spots, several microns in diameter. The irradiation of silicon-on-insulator films was performed in ambient, vacuum, or argon atmospheres, with the resulting structures and underlying substrate examined via atomic force microscopy and scanning electron microscopy. The laser fluence range within which tip formation occurs is strongly dependent on the irradiated spot size. Within this range, the height of the resulting tip increases with the fluence level, while nearly preserving the aspect ratio. The formation mechanism of these structures is briefly discussed in view of these results and other, related published work.

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“…Besides of imperfectness of the produced crater shapes 1,2 and formation of highly aligned ripples [3][4][5][6] , the growths of micro-and nanocones 7-10 , nanopillars with spikes on the top 11 , nanotips 12,13 , microbumps and nanojets [14][15][16][17] have been reported for different laser wavelengths, fluences, and laser pulse durations. The listed structures have potential applications in field emission devices, catalysis, and information storage.…”

Section: Introductionmentioning

confidence: 97%

<title>Formation of microstructure on liquid metal surface under nanosecond laser ablation</title>

et al. 2010

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We report a new phenomenon, formation of microstructures, observed at multipulsed nanosecond laser ablation of liquid metals (Ga, In, Sn-Pb alloy, Wood's metal). Laser irradiation of liquid metal targets was carried out in a gas chamber equipped with a heater. In contrast to vacuum conditions or an inert atmosphere when a crater is formed which is healed after termination of irradiation, ablation in a reactive ambient gas (air, nitrogen, sulfur hexafluoride, nitrogen trifluoride) leads to a horn-like structure growing on the irradiated surface with the rate of 3-20 μm per pulse depending on laser fluence and the types of metal and ambient gas. The interplay between different processes in a heat-affected zone of the irradiated samples is analyzed, including ablation, thermal expansion, temperature variations of viscosity, surface tension, thermal stresses, capillary and plasma effects, and surface chemistry. A clear picture of microstructure origin has been established and a qualitative modeling representation is given to explain the growth process of microstructures. The optimal conditions of microstructure growth have been determined and perspective applications of the discovered effect are discussed.

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Single-pulse excimer laser nanostructuring of silicon: A heat transfer problem and surface morphology

Cited by 23 publications

References 17 publications

Nano-Cones Formation on a Surface of Ge, Si Crystals and Si<SUB>1−<I>x</I></SUB>Ge<SUB><I>x</I></SUB> Solid Solution by Laser Radiation

Nano-Cones Formation on a Surface of Ge, Si Crystals and Si<SUB>1−<I>x</I></SUB>Ge<SUB><I>x</I></SUB> Solid Solution by Laser Radiation

Formation of conical silicon tips with nanoscale sharpness by localized laser irradiation

<title>Formation of microstructure on liquid metal surface under nanosecond laser ablation</title>

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