Abstract:The selective growth of InAs quantum dot chains self-ordered at mesoscopic distances on a rippled GaAs(001) substrate is obtained by tuning the direction of the As flux at high temperature and high As/In flux ratio Microphotoluminescence experiments demonstrate that such isolated quantum dot chains show single quantum dot emission properties
“…5. QD emission is observed as sharp excitonic lines above a wavelength of 860 nm showing the opportunity to address the single QDs in the chain [28]. Furthermore, the PL emission of the wetting layer and GaAs bulk is visible as indicated in the figure.…”
Structural and optical properties of InAs quantum dot (QD) chains formed in etched GaAs grooves having different periods from 200 to 2000 nm in [010] orientation are reported. The site-controlled QDs were fabricated by molecular beam epitaxy on soft UV-nanoimprint lithography-patterned GaAs(001) surfaces. Increasing the groove periods decreases the overall QD density but increases the QD size and the linear density along the groove direction. The effect of the increased QD size with larger periods is reflected in ensemble photoluminescence measurements as redshift of the QD emission. Furthermore, we demonstrate the photoluminescence emission from single QD chains.
“…5. QD emission is observed as sharp excitonic lines above a wavelength of 860 nm showing the opportunity to address the single QDs in the chain [28]. Furthermore, the PL emission of the wetting layer and GaAs bulk is visible as indicated in the figure.…”
Structural and optical properties of InAs quantum dot (QD) chains formed in etched GaAs grooves having different periods from 200 to 2000 nm in [010] orientation are reported. The site-controlled QDs were fabricated by molecular beam epitaxy on soft UV-nanoimprint lithography-patterned GaAs(001) surfaces. Increasing the groove periods decreases the overall QD density but increases the QD size and the linear density along the groove direction. The effect of the increased QD size with larger periods is reflected in ensemble photoluminescence measurements as redshift of the QD emission. Furthermore, we demonstrate the photoluminescence emission from single QD chains.
“…5. QD emission is observed as sharp excitonic lines above a wavelength of 860 nm showing the opportunity to address the single QDs in the chain [28]. Furthermore, the PL emission of the wetting layer and GaAs bulk is visible as indicated in the figure.Fig.…”
Structural and optical properties of InAs quantum dot (QD) chains formed in etched GaAs grooves having different periods from 200 to 2000 nm in [010] orientation are reported. The site-controlled QDs were fabricated by molecular beam epitaxy on soft UV-nanoimprint lithography-patterned GaAs(001) surfaces. Increasing the groove periods decreases the overall QD density but increases the QD size and the linear density along the groove direction. The effect of the increased QD size with larger periods is reflected in ensemble photoluminescence measurements as redshift of the QD emission. Furthermore, we demonstrate the photoluminescence emission from single QD chains.
“…Similarly, InAs quantum dot growth on rippled GaAs surfaces are known to favor areas of the surface with locally higher incident As 4 flux . The effect was observed at temperatures above 500 °C where In adatom diffusion was sufficient to enable selective growth. − However, the impact of adatom diffusion and incorporation on nanowire shell growth has not been explored.…”
Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepitaxy of strain-engineered bent nanowire heterostructures presents a promising platform for realizing the bottom-up and scalable fabrication of nanowire devices. The synthesis of these structures requires the selective asymmetric deposition of lattice-mismatched shells�a complex growth process that is not well understood. We present the nanoepitaxial growth of GaAs−InP core−shell bent nanowires and connecting nanowire pairs to form nanowire arches. The out-of-plane geometry and dual substrate connection of nanowire arches make these nanostructures highly promising for sensor-based applications. Compositional analysis of nanowire cross sections reveals the critical role of adatom diffusion in the nanoepitaxial growth process, which leads to two distinct growth regimes: indium-diffusion-limited growth and phosphorus-limited growth. The highly controllable phosphorus-limited growth mode is employed to synthesize connected nanowire pairs and quantify the role of flux shadowing on the shell growth process. Nanowires connected with shadowing are intimately fused, with the majority of shell growth forming near the interface of the two nanowires. These results provide important insight into 3D nanoepitaxy and enable possibilities for nanowire device fabrication.
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