Single quantum well GaAs/AlGaAs separate confinement heterostructure lasers with <i>n</i>-type modulation doped cores

Shank, Steven M.; Varriano, J. A.; Wicks, G. W.

doi:10.1063/1.108054

Cited by 12 publications

(5 citation statements)

References 11 publications

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“…The minimum threshold voltage (V th ) scales with the photon energy as ħω/q, where q is the electron charge. The active region is typically undoped, although modulation doping has been introduced in some cases to lower the threshold current density or to improve high-speed operation [11][12][13][14][15][16][17] .…”

Section: Conventional and Cascaded Lasersmentioning

confidence: 99%

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

et al. 2011

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The interband cascade laser differs from any other class of semiconductor laser, conventional or cascaded, in that most of the carriers producing population inversion are generated internally, at semimetallic interfaces within each stage of the active region. Here we present simulations demonstrating that all previous interband cascade laser performance has suffered from a significant imbalance of electron and hole densities in the active wells. We further confirm experimentally that correcting this imbalance with relatively heavy n-type doping in the electron injectors substantially reduces the threshold current and power densities relative to all earlier devices. At room temperature, the redesigned devices require nearly two orders of magnitude less input power to operate in continuous-wave mode than the quantum cascade laser. The interband cascade laser is consequently the most attractive option for gas sensing and other spectroscopic applications requiring low output power and minimum heat dissipation at wavelengths extending from 3 µm to beyond 6 µm.

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Section: Conventional and Cascaded Lasersmentioning

confidence: 99%

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

et al. 2011

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“…From the figure, one can see the wavelength hopping at some critical n-type dopant concentration for each . This phenomenon has been observed experimentally and is caused by the switching of the optical transition from lower energy levels to higher energy levels [7].…”

Section: Resultsmentioning

confidence: 78%

“…slightly increases with the p-type concentration although the quasi-Fermi level separation is reduced with the p-type doping. This is because the drift leakage current, which depends on the electric field in the p-cladding layer, is enhanced by the increase of [see (7)] when the active region is p-type-doped [10]. This increase of the drift leakage current compensates for the reduction of the diffusion leakage current which results from the reduction of the quasi-Fermilevel separation (and therefore the reduction of the electron density in the p-cladding layer).…”

Section: Resultsmentioning

confidence: 99%

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Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers

Yen

Lee

1998

IEEE J. Quantum Electron.

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We theoretically analyze 630-nm band GaInP-AlGaInP tensile-strained quantum-well (QW) lasers with doping in the active region. The radiative current can be significantly reduced by introducing n-type doping in the active region. However, this advantage is reduced by the increase of the leakage current. As a result, the threshold current is reduced and the emission wavelength is shortened for multiquantum-well (MQW) lasers by n-type doping. But for single-quantum-well (SQW) lasers, because of the large increase of the leakage current, the threshold current increases with n-type doping.

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“…Depending on the design of the active region, the materials system, and envisioned performance metrics, device active regions are often intentionally or unintentionally doped, as is also the case for many traditional III-V planar heterostructure laser diodes. For example, intentional n-type doping (Si or Te doping) has been used in coupled QWs of AlInGaAs/GaAs double-QW-lasers, [39] GaInP-AlGaInP MQW-based laser diodes, [40] or single-QW GaAs/AlGaAs separate confinement heterostructure (SCH) lasers, [41] to favorably manipulate threshold current density. Other examples exploit p-type doping of active regions in InGaAs/InP QW-lasers or InAs/GaAs QD-lasers to increase material gain.…”

Section: Introductionmentioning

confidence: 99%

Large Tolerance of Lasing Properties to Impurity Defects in GaAs(Sb)‐AlGaAs Core‐Shell Nanowire Lasers

Schreitmüller,

Jeong,

Esmaielpour

et al. 2023

Adv Funct Materials

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GaAs‐AlGaAs based nanowire (NW) lasers hold great potential for on‐chip photonic applications, where lasing metrics have steadily improved over the years by optimizing resonator design and surface passivation methods. The factor that will ultimately limit the performance will depend on material properties, such as native‐ or impurity‐induced point defects and their impact on non‐radiative recombination. Here, the role of impurity‐induced point defects on the lasing performance of low‐threshold GaAs(Sb)‐AlGaAs NW‐lasers is evaluated, particularly by exploring Si‐dopants and their associated vacancy complexes. Si‐induced point defects and their self‐compensating nature are identified using correlated atom probe tomography, resonant Raman scattering, and photoluminescence experiments. Under pulsed optical excitation the lasing threshold is remarkably low (<10 µJ cm−2) and insensitive to impurity defects over a wide range of Si doping densities, while excess doping ([Si]>1019 cm−3) imposes increased threshold at low temperature. These characteristics coincide with increased Shockley‐Read‐Hall recombination, reflected by shorter carrier lifetimes, and reduced internal quantum efficiencies (IQE) . Remarkably, despite the lower IQE the presence of self‐compensating Si‐vacancy defects provides an improved temperature stability in lasing threshold with higher characteristic temperature and room‐temperature lasing. These findings highlight an overall large tolerance of lasing metrics to impurity defects in GaAs‐AlGaAs based NW‐lasers.

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Single quantum well GaAs/AlGaAs separate confinement heterostructure lasers with n-type modulation doped cores

Cited by 12 publications

References 11 publications

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers

Large Tolerance of Lasing Properties to Impurity Defects in GaAs(Sb)‐AlGaAs Core‐Shell Nanowire Lasers

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