2022
DOI: 10.1038/s41598-022-11501-4
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Single-shot femtosecond bulk micromachining of silicon with mid-IR tightly focused beams

Abstract: Being the second most abundant element on earth after oxygen, silicon remains the working horse for key technologies for the years. Novel photonics platform for high-speed data transfer and optical memory demands higher flexibility of the silicon modification, including on-chip and in-bulk inscription regimes. These are deepness, three-dimensionality, controllability of sizes and morphology of created modifications. Mid-IR (beyond 4 µm) ultrafast lasers provide the required control for all these parameters not… Show more

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Cited by 19 publications
(4 citation statements)
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“…In contrast, ultrashort pulses (<10 ps) lead to limited heataffected zone. However, permanent modifications are extremely challenging to produce in the bulk and the exit surface of silicon with ultrashort laser pulses, [12] unless complex approaches are implemented for optimizing the spatial, [26][27][28] spectral, [29,30] or temporal [31][32][33] properties of the irradiation. These limitations originate from the high nonlinear refractive index of silicon (on the order of 10 À14 cm 2 W À1 [34,35] ), which causes microfilamentation at modest peak powers-and thus, an intensity clamping similar to that described for transparent media.…”
Section: Rationalementioning
confidence: 99%
“…In contrast, ultrashort pulses (<10 ps) lead to limited heataffected zone. However, permanent modifications are extremely challenging to produce in the bulk and the exit surface of silicon with ultrashort laser pulses, [12] unless complex approaches are implemented for optimizing the spatial, [26][27][28] spectral, [29,30] or temporal [31][32][33] properties of the irradiation. These limitations originate from the high nonlinear refractive index of silicon (on the order of 10 À14 cm 2 W À1 [34,35] ), which causes microfilamentation at modest peak powers-and thus, an intensity clamping similar to that described for transparent media.…”
Section: Rationalementioning
confidence: 99%
“…In contrast, ultrashort pulses (< 10 ps) lead to limited heat-affected zone. However, permanent modifications are extremely challenging to produce in the bulk and the exit surface of silicon with ultrashort laser pulses, 12 unless complex approaches are implemented for optimizing the spatial, 19,35,36 spectral, 37,38 or temporal [39][40][41] properties of the irradiation.…”
Section: Silicon-silicon Configurationmentioning
confidence: 99%
“…Mid-infrared-range (MIR, 2-12 m) femtosecond (fs) laser pulses emerged as hardly technically accessible, but very promising toolkit in IR photonics of gases [1.2], liquids [3], solids [4,5] and even biological samples [6,7]. This spectral range, typically free of electronic transitions, corresponds to the transparency window of the most solid dielectrics and even semiconductors, while covers the most important ("fingerprint") molecular and optical-phonon (sub-lattice) vibrations in any media.…”
mentioning
confidence: 99%
“…Moreover, MIR fs-laser pulses were recently demonstrated to be very promising in their "invasive" interactions with either UV-MIR transparent solid dielectrics, or UV-near-IR opaque semiconductors (both on surfaces and in bulk), when the underlying non-linear photo-processes become strongly-driven at high I 2 factors [1][2][8][9][10]. Specifically, recently structural modification in bulk silicon [4] and even diamond [11] was achieved, utilizing tightly focused MIR fs-laser pulses. Direct selective linear (single-photon) MIR fs-laser excitation of optical phonons in polar dielectrics (h-BN, 7.8 m) [12] and multi-photon MIR fs-laser excitation of optical bi-phonons (quasi-particle made of phonons with the opposite wave-vectors [13]) in non-polar dielectrics (diamond, 4.0 and 4.7 m) [11] were demonstrated to drive quantum bosonic lattice dynamics.…”
mentioning
confidence: 99%