Single‐Shot Laser‐Induced Switching of an Exchange Biased Antiferromagnet

Abstract

Ultrafast manipulation of magnetic order has challenged our understanding the fundamental and dynamic properties of magnetic materials. So far single shot magnetic switching has been limited to ferrimagnetic alloys, multilayers and designed ferromagnetic heterostructures. In ferromagnetic (FM)/antiferromagnetic (AFM) bilayers, exchange bias (He) arises from the interfacial exchange coupling between the two layers and reflects the microscopic orientation of the antiferromagnet. Here we demonstrate the possibility of single shot switching of the antiferromagnet (change of the sign and amplitude of He) with a single femtosecond laser pulse in IrMn/CoGd bilayers. We demonstrate the manipulation in a wide range of fluences for different layer thicknesses and compositions. Atomistic simulations predict ultrafast switching and recovery of the AFM magnetization on a timescale of 2 ps. Our results provide the fastest and the most energy‐efficient method to set the exchange bias and pave the way to potential applications for ultrafast spintronic devices.This article is protected by copyright. All rights reserved