Single-Shot Readout of a Nuclear Spin in Silicon Carbide

Fluorescence Enhancement of Single V2 Centers in a 4H-SiC Cavity Antenna

“…Our results provide a promising route to strongly enhanced fluorescence with spin-selective excitation and thus could be used to boost readout rates in electron−nuclear spin experiments. 17,18 As shown in ref 35, our design could be adapted to a smaller resonance around the ZPL with an increased membrane thickness, i.e., with expectedly smaller absorption line widths, 36 at the cost of a slightly reduced enhancement. Thus, it is also of high interest for applications in quantum networking, where a high ZPL rate and coherent optical lines are key requirements.…”

“…Optically active spins in solid-state materials are promising candidates for applications in quantum technologies. − Besides the well-established diamond platform, , 4H-silicon carbide (4H-SiC) has gained growing attention in the field. It hosts several promising emitters such as the silicon-vacancy center (V Si ), − the divacancy center (VV), − as well as the more recently investigated nitrogen-vacancy center, , and the vanadium center. , This has yielded a number of encouraging results with regards to quantum networks, such as single shot readout of the electron spin state through charge state conversion using the VV center, or through a nearby nuclear spin in case of the V Si center, , as well as spin-photon entanglement using the V Si . In addition, silicon carbide offers excellent nanofabrication capabilities.…”