Single-shot selective femtosecond and picosecond infrared laser crystallization of an amorphous Ge/Si multilayer stack

Володин, В. А.; Cheng, Yuzhu; Bulgakov, Alexander V.; Lévy, Yoann; Beránek, Jaroslav; Nagisetty, Siva Sankar; Zukerstein, Martin; Попов, А. А.; Bulgakova, Nadezhda M.

doi:10.1016/j.optlastec.2023.109161

Cited by 15 publications

(32 citation statements)

References 68 publications

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“…The pixel area in the object plane of the IS is determined by calibration using a USAF 1951 target. Therefore, the threshold peak fluence was calculated as F =2 E / A , where E is the threshold energy at which the damage starts to occur [ 30 ] .…”

Section: Methodsmentioning

confidence: 99%

“…The pixel area S pixel in the object plane of the IS is determined by calibration using a USAF 1951 target. Therefore, the threshold peak fluence was calculated as F th =2E th /A eff , where E th is the threshold energy at which the damage starts to occur [30] . Automation of the entire experiment requires a specific synchronization time control for all the devices.…”

Section: Methodsmentioning

confidence: 99%

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Exploring fs-laser irradiation damage subthreshold behavior of dielectric mirrors via electrical measurements

Bleotu,

Udrea,

Dumitru

et al. 2023

High Pow Laser Sci Eng

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With ultrafast laser systems reaching presently 10 PW peak power or operating at high repetition rates, research towards ensuring the long-term, trouble-free performance of all laser-exposed optical components is critical. Our work is focused on providing insight into the optical material behavior at fluences below the standardized laser-induced damage threshold (LIDT) value by implementing a simultaneous dual analysis of surface emitted particles using a Langmuir probe (LP) and the target current (TC). HfO 2 and ZrO 2 thin films deposited on fused silica substrates by pulsed laser deposition at various O 2 pressures for defect and stoichiometry control were irradiated by Gaussian, ultrashort laser pulses (800 nm, 10 Hz, 70 fs) in a wide range of fluences. Both TC and LP collected signals were in good agreement with the existing theoretical description of laser-matter interaction at an ultrashort time scale. Our approach for an in situ LIDT monitoring system provides measurable signals for below-threshold irradiation conditions that indicate the endurance limit of the optical surfaces in the single-shot energy scanning mode. The LIDT value extracted from the LP-TC system is in line with the multipulse statistical analysis done with ISO 21254-2:2011(E). The implementation of the LP and TC as on-shot diagnostic tools for optical components will have a significant impact on the reliability of next-generation ultrafast and high-power laser systems.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Exploring fs-laser irradiation damage subthreshold behavior of dielectric mirrors via electrical measurements

Bleotu,

Udrea,

Dumitru

et al. 2023

High Pow Laser Sci Eng

View full text Add to dashboard Cite

show abstract

“…The substrate temperature during deposition was 225 • C. It should be emphasized that the precursor was germane (GeH 4 ) diluted with Ar, leading to hydrogen being present in the amorphous germanium film. According to estimates from the analysis of the IR absorption spectrum, the atomic concentration of hydrogen was less than 10% [12]. The film thickness of 200 nm was determined by the deposition time and the deposition rate, which was refined from the analysis of the germanium layer thickness from electron microscopy data.…”

Section: Methodsmentioning

confidence: 99%

“…They were analyzed by an optical microscope Olympus BX43 (Shionjuku, Japan) in Nomarski mode. Details of the laser annealing experiments can be found elsewhere [12,13].…”

Section: Methodsmentioning

confidence: 99%

Ultrafast Infrared Laser Crystallization of Amorphous Ge Films on Glass Substrates

Cheng,

Bulgakov,

Bulgakova

et al. 2023

Micromachines

Self Cite

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Amorphous germanium films on nonrefractory glass substrates were annealed by ultrashort near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses. Crystallization of germanium irradiated at a laser energy density (fluence) range from 25 to 400 mJ/cm2 under single-shot and multishot conditions was investigated using Raman spectroscopy. The dependence of the fraction of the crystalline phase on the fluence was obtained for picosecond and femtosecond laser annealing. The regimes of almost complete crystallization of germanium films over the entire thickness were obtained (from the analysis of Raman spectra with excitation of 785 nm laser). The possibility of scanning laser processing is shown, which can be used to create films of micro- and nanocrystalline germanium on flexible substrates.

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“…where, r 0 and τ are the radius of laser spot and the laser pulse width, respectively. The r 0 is the half width at 1/e 2 of the peak intensity [16].…”

Section: Thermal Effect Of Qwip Under Laser Irradiationmentioning

confidence: 99%

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

Sun,

Qian,

Liu

et al. 2024

Phys. Scr.

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The damage effect and mechanism of laser irradiation on long-wave focal plane array (FPA) GaAs/AlGaAs quantum well infrared photodetector (QWIP) were preliminarily explored by using numerical simulation and experiment methods. Piecewise functions were employed to simulate the complex boundary structure of the QWIP, enabling the numerical simulation investigation of mono-pulse, nano-second, long-wave infrared laser irradiation damage effect on the QWIP. The highest QWIP temperature, the highest surface temperature and the maximum circumferential thermal stress were analyzed in relation to laser energy density. The pulse average energy density thresholds of thermal decomposition damage, melting damage and thermal stress-induced damage were theoretically obtained. Preliminary experiments were then conducted by using a mono-pulse, nano-second, 7.2 μm all-solid-state long-wave infrared laser. The experimental results revealed a point-shape damage in QWIP response measurement after the irradiation by a laser pulse of average energy density 1.30 J cm−2, due to the decomposition of GaAs. At a higher average energy density 5.42 J cm−2, both melting and stress-induced damages appeared, with the damage morphology predominantly influenced by stress-induced damage, resulting in the occurrence of blind pixels or the losing of pixels. Furthermore, at laser pulse average energy density 12.48 J cm−2, line-shape damage of the QWIP was observed.

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Single-shot selective femtosecond and picosecond infrared laser crystallization of an amorphous Ge/Si multilayer stack

Cited by 15 publications

References 68 publications

Exploring fs-laser irradiation damage subthreshold behavior of dielectric mirrors via electrical measurements

Exploring fs-laser irradiation damage subthreshold behavior of dielectric mirrors via electrical measurements

Ultrafast Infrared Laser Crystallization of Amorphous Ge Films on Glass Substrates

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

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