2008
DOI: 10.1103/physrevlett.100.057206
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Single-Shot Time-Resolved Measurements of Nanosecond-Scale Spin-Transfer Induced Switching: Stochastic Versus Deterministic Aspects

Abstract: Using high bandwidth resistance measurements, we study the single-shot response of tunnel junctions subjected to spin torque pulses. After the pulse onset, the switching proceeds by a ns-scale incubation delay during which the resistance is quiet, followed by a 400 ps transition terminated by a large ringing that is damped progressively. While the incubation delay fluctuates significantly, the resistance traces are reproducible once this delay is passed. After switching, the time-resolved resistance traces ind… Show more

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Cited by 241 publications
(188 citation statements)
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“…More importantly, the fact that the lowest mode is not the uniform mode, but an edge mode, will affect the magnetization reversal path in current-induced switching, favoring non-uniform reversal paths, as has already been concluded indirectly from reversal speed experiments. 39 …”
Section: B Low-field Behavior and Its Relevance For Applicationsmentioning
confidence: 99%
“…More importantly, the fact that the lowest mode is not the uniform mode, but an edge mode, will affect the magnetization reversal path in current-induced switching, favoring non-uniform reversal paths, as has already been concluded indirectly from reversal speed experiments. 39 …”
Section: B Low-field Behavior and Its Relevance For Applicationsmentioning
confidence: 99%
“…It also has recently become possible to drive individual nanometer scale magnetic elements far from equilibrium using spin-currents and probe their dynamical response. However, most electronic transport studies focus on the excitation during the drive pulses 6,7 . Less is known about the relaxation processes following a pulse excitation.…”
Section: Pacs Numbersmentioning
confidence: 99%
“…Electrical detection of spin dependent transport properties has been also applied for various structures [8][9][10][11][12][13][14][15][16][17][18][19] . In particular, giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) in junction structures 8,9) have been intensively studied since in the structures magnetization can be manipulated by spin-polarized current. The anomalous Hall effect is another spin dependent transport measurement and has been used as a probe to detect magnetization behavior of perpendicularly magnetized lm because of its terminal geometry.…”
Section: Introductionmentioning
confidence: 99%
“…Understanding of magnetization behavior of magnetic nanostructures has become more important since behavior of those nanostructures dominate device properties. In order to study magnetization behavior of magnetic nanostructures, various measurement techniques had been developed for nanostructures [1][2][3][4][5][6][7][8][9][10] because the low sensitivity of conventional magnetometry is insuf cient to detect magnetization reversal of a single structures. Detection of magnetic ux would be the most straightforward method.…”
Section: Introductionmentioning
confidence: 99%