Single-source MOCVD of Y-, Ba- and Cu-oxides from thd-precursors

Klippe, L.; Wahl, G.

doi:10.1016/s0925-8388(96)02681-3

Cited by 13 publications

(4 citation statements)

References 4 publications

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“…In addition, Y 2 O 3 is a constituent of several more complex thin film materials. YBa 2 Cu 3 O 7 - δ is a well-known high- T c superconductor, and many studies of yttrium-stabilized ZrO 2 9 and Y 2 O 3 :Eu 2+ have been published …”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Y₂O₃ Thin Films from Yttrium Tris(N,N‘-diisopropylacetamidinate) and Water

2005

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Y2O3 thin film was deposited by atomic layer deposition (ALD) with a new precursor yttrium tris(N,N‘-diisopropylacetamidinate), Y(iPr2amd)3, and water. The precursor was thermally stable and volatile and had high reactivity with water. The growth rate of Y2O3 films was 0.8 Å/cycle over a wide temperature range (150−280 °C). The films were very pure (C, N < 0.5 at. %) and had a refractive index of 1.8. The films were smooth and had a cubic polycrystalline structure. High quality films were also deposited in 40:1 aspect ratio profiled substrates. Y2O3 films adsorbed water after air exposure because Rutherford backscattering spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) showed an increased oxygen ratio (O/Y > 1.5) and −OH bonds in air-exposed films. A relatively high permittivity (∼12), a low leakage current density (<10-7 cm2 at 2 MV/cm) and high electrical breakdown field (∼5 MV/cm) were measured for capacitors prepared from Al2O3 (10 Å)/Y2O3/n-Si structures. Uncapped Y2O3 films showed flatband voltage shifts of 1 V and increased leakage current prior to annealing. ALD Y2O3 is a promising dielectric for advanced electronic applications in nanoscale devices.

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Y₂O₃ Thin Films from Yttrium Tris(N,N‘-diisopropylacetamidinate) and Water

2005

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“…MOCVD using band flash evaporation is described in literature as a method for the fabrication of complex oxide coatings in the field of high temperature superconductors. 15 16 Beside the two flash evaporation methods, a continuous evaporation method was employed for the deposition of alumina coatings. In this case the aluminum precursor was directly evaporated from a crucible.…”

Section: Methodsmentioning

confidence: 99%

Single-Step Fabrication of Nanolamellar Structured Oxide Ceramic Coatings by Metal-Organic Chemical Vapor Deposition

Eils

Mechnich²,

Keune³

et al. 2011

J. Nanosci. Nanotech.

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Oxide ceramic coatings in the system Y2O3-Al2O3-ZrO2 were fabricated in laboratory scale by using a MOCVD unit. A hot wall reactor was used along with different precursor feeding systems. Most experiments were carried out by using powder flash evaporation including a screw feeder for precursor powder delivery. For comparison, further samples were fabricated by using band flash evaporation and continuous evaporation from a crucible. Oxygen was used in all cases as reactant gas. Aluminium-tris-2,4-pentanedione (Al(acac)3), yttrium-tris-2,2,6,6-tetramethyl-3,5-heptanedione (Y(thd)3) and zirconium-tetrakis-2,2,6,6-tetramethyl-3,5-heptanedione (Zr(thd)4) were applied as metal-organic precursors because of their similar vaporization behaviour under the given conditions. The coating stoichiometry was varied from pure alumina to complex ternary compositions in the system Y2O3-Al2O3-ZrO2. Both kinds of ternary coatings fabricated by using flash evaporation methods show a nanolamellar microstructure in the as deposited state. Heat treating experiments at 1200 degrees C for up to 5 days enhance the lamellar character of the coating deposited by using powder flash evaporation. The lamellar microstructure is due to alternating YSZ enriched layers and YAG enriched layers in this state. However, the coating fabricated by using band flash evaporation shows a dense interpenetrating network of YSZ and YAG after heat treating instead of a lamellar microstructure observed in the as deposited state.

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“…β-Diketonates, like Cu(aa) 2 , copper(II) bis(hexafluoroacetylacetonate) (Cu(hfac) 2 ), and copper(II) bis(tetramethylheptanedionate) (Cu(thd) 2 ) form a group of compounds that are volatile and relatively stable. They have been extensively studied in the CVD of both copper and copper oxide Cu(thd) 2 , however, does not absorb water due to its bulky ligands, making it stable over longer periods of time, even in an ambient gas atmosphere.…”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition of Cu_xS: Surface Contamination by Reaction Products

et al. 2005

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Thin films of Cu x S are grown by chemical vapor deposition using Cu(thd)2 (thd = tetramethylheptanedionate), H2S, and H2 as the precursors. A deposition profile, not caused by depletion of the precursors, is present in all films. Hydrogen is needed for growth to occur; in atomic layer deposition of Cu x S the reaction between Cu(thd)2 and H2S does not require H2. To explain these observations, a model is derived on the basis of competitive adsorption of Cu(thd)2 and the reaction product Hthd at the surface. With numerical calculations, the growth rate, the Cu(thd)2 concentration, and the Hthd concentration as a function of the flow axis can be simulated. A deposition profile due to competitive adsorption of Cu(thd)2 and Hthd is found.

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Single-source MOCVD of Y-, Ba- and Cu-oxides from thd-precursors

Cited by 13 publications

References 4 publications

Atomic Layer Deposition of Y₂O₃ Thin Films from Yttrium Tris(N,N‘-diisopropylacetamidinate) and Water

Atomic Layer Deposition of Y₂O₃ Thin Films from Yttrium Tris(N,N‘-diisopropylacetamidinate) and Water

Single-Step Fabrication of Nanolamellar Structured Oxide Ceramic Coatings by Metal-Organic Chemical Vapor Deposition

Chemical Vapor Deposition of Cu_xS: Surface Contamination by Reaction Products

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Single-source MOCVD of Y-, Ba- and Cu-oxides from thd-precursors

Cited by 13 publications

References 4 publications

Atomic Layer Deposition of Y2O3 Thin Films from Yttrium Tris(N,N‘-diisopropylacetamidinate) and Water

Atomic Layer Deposition of Y2O3 Thin Films from Yttrium Tris(N,N‘-diisopropylacetamidinate) and Water

Single-Step Fabrication of Nanolamellar Structured Oxide Ceramic Coatings by Metal-Organic Chemical Vapor Deposition

Chemical Vapor Deposition of CuxS: Surface Contamination by Reaction Products

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Atomic Layer Deposition of Y₂O₃ Thin Films from Yttrium Tris(N,N‘-diisopropylacetamidinate) and Water

Atomic Layer Deposition of Y₂O₃ Thin Films from Yttrium Tris(N,N‘-diisopropylacetamidinate) and Water

Chemical Vapor Deposition of Cu_xS: Surface Contamination by Reaction Products