2011
DOI: 10.1016/j.ccr.2010.12.018
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Single-source precursors to gallium and indium oxide thin films

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Cited by 80 publications
(76 citation statements)
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“…64 14 (THF) 6 ] (Ln = Y, Sm, Yb) by the reaction of anhydrous LnCl 3 with 7 equiv of NaOCH 2 CF 3 . 175 Similarly, the reaction between anhydrous yttrium trichloride and barium hexaisopropoxide gave heterometallic [YBa 2 (HFIP) 7 (THF)], which on further reaction with Y(thd) 3 yielded the mixedligand heterometallic [BaY 2 (HFIP) 4 (thd) 4 ] as the major product. 176 An alkoxide ion RO − is a versatile ligand that coordinates to a metal center either in terminal or in bridging manner (μ or μ 3 due to the presence of 3 pairs of electrons available on the oxygen atom, although there is also a possibility of the bridging mode involving a higher number of metal centers, e.g., μ 4 -, etc., due to delocalized bonding).…”
Section: Synthetic Methodsmentioning
confidence: 98%
See 1 more Smart Citation
“…64 14 (THF) 6 ] (Ln = Y, Sm, Yb) by the reaction of anhydrous LnCl 3 with 7 equiv of NaOCH 2 CF 3 . 175 Similarly, the reaction between anhydrous yttrium trichloride and barium hexaisopropoxide gave heterometallic [YBa 2 (HFIP) 7 (THF)], which on further reaction with Y(thd) 3 yielded the mixedligand heterometallic [BaY 2 (HFIP) 4 (thd) 4 ] as the major product. 176 An alkoxide ion RO − is a versatile ligand that coordinates to a metal center either in terminal or in bridging manner (μ or μ 3 due to the presence of 3 pairs of electrons available on the oxygen atom, although there is also a possibility of the bridging mode involving a higher number of metal centers, e.g., μ 4 -, etc., due to delocalized bonding).…”
Section: Synthetic Methodsmentioning
confidence: 98%
“…6 4 − 6 6 The isolate d complexes [NaLn- 7 (THF) 2 ], and [Na 2 Y(TFA) 5 (tetraglyme)] are among the first heterometal−organic single source precursors for heterometallic fluoride nanomaterials. The [Ln(μ-η 1 :η 1 -TFA) 2 (μ 3 -η 2 (O,F):η 1 :η 1 -TFA) 2 Na(η 3 -diglyme)] ∞ is a 1D polymeric Ln-TFA chain containing doubly and triply bridging TFA ligands, the latter also connecting peripheral [Na(η 3 -diglyme)] units via one O and one F centers (Figure 17a).…”
Section: A Main Group Metal and A Transition Metalmentioning
confidence: 99%
“…Applications of indium oxide include thin-film IR reflectors; in combination with SnO 2 (indium tin oxide, ITO), it is widely used as transparent and conductive coatings in liquid-crystal displays (LCDs), light-emitting diodes (LEDs), touch panels, and so on [33][34][35] . The formation of gallium oxide and indium oxide thin films by the decomposition of single-source precursors, among them β-diketonates, was recently reviewed 36,37 .…”
Section: Group 13 Elements (Al Ga In)mentioning
confidence: 99%
“…It is-due to its odd-electron ( 2 B 1g ) ground state [2]-used in organic light emission diode (OLED) technology where the thin Cu(pc) film increases the hole transport out of the anode [3]. On the other hand, for oxide film production (e.g., gallium oxide thin films), highly volatile metal complexes such as b-diketones [4] and metal carboxylates are used. One of the most promising precursors among the class of carboxylates is metal complexes with pivalate chelate ligands.…”
Section: Introductionmentioning
confidence: 99%