2007
DOI: 10.1063/1.2757602
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Single-step fabrication of Fresnel microlens array on sapphire substrate of flip-chip gallium nitride light emitting diode by focused ion beam

Abstract: A simple one-step focused ion beam milling technique was used to fabricate a Fresnel microlens array on the backside of sapphire substrate of a gallium nitride blue light emitting diode. The optical output power from the flip-chip gallium nitride blue light emitting diode is enhanced to about 1.68 times at the injection current of 20mA. The spatial light distribution from the backside of flip-chip gallium nitride blue light emitting diode with a Fresnel microlens array shows a uniform and stronger light emissi… Show more

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Cited by 23 publications
(7 citation statements)
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“…The wide-bandgap direct-gap semiconductor gallium nitride (GaN) is well-known for its excellent electronic and linear optical properties [1][2][3] that have resulted in a large variety of electronic and optoelectronic applications, such as light-emitting diodes (LEDs) [4], field-effect transistors (FETs) [5,6], and high-temperature electronic devices [7]. Throughout the years, outstanding expertise in crystal growth [8,9] and post-processing [10][11][12][13] of GaN samples has been developed, enabling the production of complex integratable structures.…”
Section: Introductionmentioning
confidence: 99%
“…The wide-bandgap direct-gap semiconductor gallium nitride (GaN) is well-known for its excellent electronic and linear optical properties [1][2][3] that have resulted in a large variety of electronic and optoelectronic applications, such as light-emitting diodes (LEDs) [4], field-effect transistors (FETs) [5,6], and high-temperature electronic devices [7]. Throughout the years, outstanding expertise in crystal growth [8,9] and post-processing [10][11][12][13] of GaN samples has been developed, enabling the production of complex integratable structures.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, the UV emitters with Al x Ga 1-x N alloy as active layers show very poor LEE. Numerous schemes have been developed to enhance the LEE of LEDs, such as photonic crystal LEDs 22 23 , patterned substrate 24 25 , and integrated microlens array 13 26 . Recent works by using large index contrast photonic crystal 27 28 and self-assembled microlens arrays 29 30 had also been implemented in achieving significant improvement in light extraction in GaN-based LEDs.…”
mentioning
confidence: 99%
“…On the other hand, diffractive microlenses exhibit less aberration, but their physical size and complex three-dimensional (3D) surface profiles make them less useful in miniaturized and highly scaled devices. Furthermore, their fabrication requires precise alignment during multiple lithographic processes, which also limits their adoption in highly integrated micro-/nano-optical devices [ 6 , 7 ].…”
Section: Introductionmentioning
confidence: 99%