“…For example, when spin coating this material, thin films of predominantly amorphous TES ADT are obtained. 7,8 However, over the years, a number of different crystalline phases, the a-, b-, g-, and d-phase, were reported (see Table 1), explaining why charge-carrier mobility values measured in OFETs can spread over six orders of magnitudes. 9,10 In this review, we will highlight some of the knowledge that has been gained over the years to understand specific aspects of polymorph formation in TES ADT thin films and that now permits TES ADT structures to be deposited over large areas with high reproducibility and to pattern TES ADT in a robust manner.…”