Single Supply, High Linearity, High Efficient PHEMT Power Devices and Amplifier for 2 GHz &amp;amp; 5 GHz WLAN Applications

Park, Min; Ahn, Ho−Kyun; Kang, Dong Min; Ji, Hong−Gu; Mun, Jae‐Kyoung; Kim, Haecheon; Cho, Kyoung Ik

doi:10.1109/euma.2003.340967

Cited by 9 publications

(3 citation statements)

References 7 publications

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“…The bandwidth should be included in the FOM calculation, and therefore, a new FOM is proposed as (9) where BW is bandwidth (%). Two FOM calculations are also listed in Table I.…”

Section: Resultsmentioning

confidence: 99%

“…The enhancement-mode pseudomorphic high electron mobility transistors (E-mode PHEMT) are suitable for the modern wireless mobile communications due to their single voltage supply and low knee voltage characteristics [5]. A few high efficiency PAs have been demonstrated using GaAs MESFET [6]- [8], and quasi E-mode [9], [10] technologies. By using the reactance compensation technique, our proposed class-E PA achieves superior performance.…”

Section: Introductionmentioning

confidence: 99%

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A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

Lin

Chang

2010

IEEE Microw. Wireless Compon. Lett.

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This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 m enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P 1 dB ) of higher than 27 dBm. Index Terms-Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT), high efficiency, power amplifier (PA), reactance compensation.

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“…The bandwidth should be included in the FOM calculation, and therefore, a new FOM is proposed as (9) where BW is bandwidth (%). Two FOM calculations are also listed in Table I.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

Lin

Chang

2010

IEEE Microw. Wireless Compon. Lett.

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“…Supply voltage conditions were as follows: V cc was 3.0-V, and both bias circuit voltages (V b ) were 2.75-V. For nonlinear output, the signal no longer follows the true envelope shape. There is asymmetrical signal clipping resulting in distortion [8]. Therefore, we carried out the adjacent channel leakage power ratio (ACLR) measurement, which is achieved using 3.84Mc/s hybrid phase-shift keying (HPSK) modulated signal in 5MHz offset frequency band.…”

Section: Introductionmentioning

confidence: 99%

Low power consumptive mixed mode MMIC power amplifier module for WCDMA Handset Applications

Park

Choi

Kang

et al. 2007

2007 European Microwave Integrated Circuit Conference

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A high average-efficient MMIC power amplifier is implemented utilizing mixed mode power stage techniques with proper linearity. The average power efficiency, which is more important fact to save the battery in handsets, is improved about three times than commercial PAs with only supply voltage of 3.0-V. The power amplifier has been optimized for different P1dB (1-dB compression point) value: one for 16 dBm for the low power mode, targeting the most probable transmission power, and the other for 28 dBm for the high power mode. A PAE of 29.0% at 16 dBm of out power, which is the maximum bound of the most probable transmission power in IS-95 systems, was obtained, as well as 46.7% at 28.2dBm for the high power mode. The measured adjacent channel leakage power ratios (ACLR) at the high and low power mode of P 1dB are -36.17 and -36.16dBc, respectively, and satisfy the Third-Generation Partnership Project (3GPP) WCDMA specification.

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A Single-bias 2W PHEMT MMIC by Gate Zero-Bias Technique for C Band Applications

Lin

Liu

Huang

et al.

2005 IEEE Conference on Electron Devices and Solid-State Circuits

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Single Supply, High Linearity, High Efficient PHEMT Power Devices and Amplifier for 2 GHz & 5 GHz WLAN Applications

Cited by 9 publications

References 7 publications

A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

Low power consumptive mixed mode MMIC power amplifier module for WCDMA Handset Applications

A Single-bias 2W PHEMT MMIC by Gate Zero-Bias Technique for C Band Applications

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