Single transverse mode condition of surface‐emitting injection lasers

Abstract

The surface‐emitting laser can be fabricated monolithically via planar technology and mass‐produced for applications to laser discs and optical IC's for optical communication. However, the transverse mode control in the surface‐emitting laser, which is important to laser oscillation, has not been well studied. This paper discusses the transverse mode control for the surfaceemitting laser and clarifies the shape of the single transverse mode in the structure. As a result of the calculation for a laser wavelength of 1.3 μm, if the composition of the waveguide core (the carrier‐confining layer) is λ = 0.93 μm in a structure where a waveguide is built in the cavity, the waveguide radius must be less than 2 μm. For a structure where only the active layer is embedded, the radius of the reflector must be 3 to 4 μm or the radius of the active region must be 5 to 7 μm when the reflector radius is 10 μm. Therefore, even in the surface‐emitting laser, the transverse mode control can be achieved relatively easily.

A comprehensive circuit-level model of vertical-cavity surface-emitting lasers

“…As we shall show later, by substituting into these rate equations an orthogonal series expansion for the carrier profile and an assumed functional form for the mode profile, we can generate a set of spatially independent rate equations that need only be solved in the time domain. This approach has been used successfully by various authors for VCSEL's [28], [30], [53] as well as edge emitters [43], [45], [54].…”

“…The spatially dependent rate equations that form the foundation of our model are based largely on those presented by Moriki et al in [53]. The first equation, which describes the carrier number in the active region, is…”

Statistics of transverse mode turn-on dynamics in VCSELs

“…Accordingly, an expansion of the carrier number, dependent only on the radial coordinate and time, can be carried out as in [21] so that (8) where the numbers satisfy . Simplification of the equation for the carrier density (3) implies the replacement of the bimolecular recombination term by a linear term including the mean recombination time .…”

Circuit-level simulation approach to analyze system-level behavior of VCSEL-based optical interconnects

“…For example, one can say that all VCSELs can be described by the same set of equations: the VCSEL rate equation. 15 Differences between VCSEL products are caused by different technology or production parameters (material technology, cavity properties, gain, etc.). This yields different constants for the rate equations, which we collect into a product-specific set of parameters.…”