Single-trap emission kinetics of vertical β-Ga₂O₃ Schottky diodes by deep-level transient spectroscopy

Abstract

We report the emission kinetics of a single-electron trap (E1, E C–0.63 eV) in Sn-doped ( 2 ˉ 01) β-Ga2O3 crystals studied using deeplevel transient spectroscopy (DLTS). The time constant ( τ ) of the electrons emitted from the trap level E1 was thoroughly investigated as a function of the temperature and the electric field (E-field) . The temperature-dependence τ of E1 was extracted by both the temperature-scanning and isothermal modes of DLTS. It was found that the emission process accelerated exponentially from 200 K to 350 K. The E-field dependence of the emission time constant could be divided into two regimes for all measurement steps (250–325 K). In the low-electric-field regime, the emission time constant of the trap decreased slightly with a strengthened E-field. With a further enhancement of the E-field (E > 1.76 MV cm−1), the field-enhanced emission rate was accurately modeled by the Poole–Frenkel effect; the accelerated emission process was attributed to a reduction of the Coulomb well barrier for the donor-like trap E1.

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

“…2(d) illustrates apparent trap concentration (N Ta ) profile versus depletion region width (W R ) at 315 K, obtained from the isothermal ODLTS results for scaning U R . W R was determined from C-V characteristics at 315 K by the relation [34] :…”

Emission and capture characteristics of electron trap (E emi = 0.8 eV) in Si-doped β-Ga2O3 epilayer

“…As shown in figure 3(c), the T-dependent relationship can be fitted by Arrhenius relation, which is expressed as following equation [4]:…”

“…(4.9 eV), high critical electric field of 8 MV cm −1 , and excellent thermal stability [1][2][3]. In addition to β-Ga 2 O 3 devices based on bulk semiconducting materials [4,5], there have been ample efforts devoted to development of β-Ga 2 O 3 epitaxial layers and devices [6][7][8][9][10]. High-quality β-Ga 2 O 3 homogeneous epilayers with low effective donor concentration have been grown and demonstrated by hydride vapor phase epitaxy (HVPE) [10].…”

Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy

“…of single-crystal native substrates [1,2]. In the past, in addition to unipolar devices [3][4][5], enormous efforts have been made in the development of β-Ga 2 O 3 -based bipolar devices [6][7][8][9]. However, p-type β-Ga 2 O 3 represents a challenge due to its large hole effective mass and self-trapping of holes in β-Ga 2 O 3 [2,10].…”