Single ZnO Nanowire/p‐type GaN Heterojunctions for Photovoltaic Devices and UV Light‐Emitting Diodes

Bie, Ya‐Qing; Liao, Zhi-Min; Wang, Pengwei; Zhou, Yang-Bo; Han, Xiaobing; Ye, Yu; Zhao, Qing; Wu, Xiaosong; Dai, Li‐Xin; Xu, Jingyi; Sang, Liwen; Deng, Junjing; Laurent, Kevin; Leprince‐Wang, Yamin; Yu, Dapeng

doi:10.1002/adma.201000985

Cited by 75 publications

(51 citation statements)

References 33 publications

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“…The natural atomic bonding between the ZnO and GaN formed the p-n heterojunction. Finally, metal electrodes were deposited in order to complete the device fabrication [55,56]. Yu et al fabricated n-ZnO nanowire/p-GaN film heterojunctions which were used as UV light-emitting diodes and self-powered UV detector.…”

Section: -D Nanostructure/thin Film or Si Substrate Heterojunctionsmentioning

confidence: 99%

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Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Zhang

Geng

2017

Crystals

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Abstract:Wide band gap II-VI semiconductor nanostructures have been extensively studied according to their great potentials for optoelectronic applications, while heterojunctions are fundamental elements for modern electronic and optoelectronic devices. Subsequently, a great deal of achievements in construction and optoelectronic applications of heterojunctions based on II-VI compound semiconductor one-dimensional nanostructures have been obtained in the past decade. Herein, we present a review of a series of progress in this field. First, construction strategies towards different types of heterojunctions are reviewed, including core-shell heterojunctions, one-dimensional axial heterojunctions, crossed nanowires heterojunctions, and one-dimensional nanostructure/thin film or Si substrate heterojunctions. Secondly, optoelectronic applications of these constructed heterojunctions, such as photodetectors, solar cells, light emitting diodes, junction field effect transistors, etc., are discussed briefly. This review shows that heterojunctions based on II-VI compound semiconductor 1-D nanostructures have great potential for future optoelectronic applications.

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Section: -D Nanostructure/thin Film or Si Substrate Heterojunctionsmentioning

confidence: 99%

“…The natural atomic bonding between the ZnO and GaN formed the p-n heterojunction. Finally, metal electrodes were deposited in order to complete the device fabrication [55,56].…”

Section: -D Nanostructure/thin Film or Si Substrate Heterojunctionsmentioning

confidence: 99%

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Zhang

Geng

2017

Crystals

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“…Nanoscale lasers, [ 1,2 ] light-emitting diodes, [3][4][5][6] and photovoltaic (PV) cells [7][8][9][10] based on ZnO or GaN nanowires have been successfully demonstrated. In the past few years, a large number of experiments have been conducted, focusing on UV photodetection using ZnO nanowires.…”

mentioning

confidence: 99%

Self‐Powered, Ultrafast, Visible‐Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p‐n Junctions

et al. 2010

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Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, are demonstrated. Moreover, a CdSe-nanowire red-light detector powered by a nanoscale ZnO/GaN photovoltaic cell is also demonstrated, which extends the device function to a selective multiwavelength photodetector and shows the function of an optical logical AND gate.

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“…[11][12][13][14][15][16] Among such systems, ZnO has always stood out due to its attractive wide band gap (3.37 eV at room temperature) with a high exciton binding energy (60 meV), which makes it appropriate for short wavelength optoelectronic applications, such as ultra-violet (UV) detectors, and UV and blue light emitting devices. 11,17,18 Despite the extensive research and the achieved progress, the integration of ZnO nanowires as a complete optoelectronic device is still a challenge.…”

Section: Introductionmentioning

confidence: 99%

ZnO UV photodetector with controllable quality factor and photosensitivity

et al. 2013

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ZnO nanowires have an enormous potential for applications as ultra-violet (UV) photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating that the relative photosensitivity and quality factor (Q factor) of the photodetector are entirely tunable by an applied gate voltage. This mechanism enables UV photodetection selectivity ranging from wavelengths from tens of nanometers (full width at half maximum - FWHM) down to a narrow detection of 3 nm. Such control paves the way for novel applications, especially related to the detection of elements that have very sharp luminescence

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Single ZnO Nanowire/p‐type GaN Heterojunctions for Photovoltaic Devices and UV Light‐Emitting Diodes

Cited by 75 publications

References 33 publications

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Self‐Powered, Ultrafast, Visible‐Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p‐n Junctions

ZnO UV photodetector with controllable quality factor and photosensitivity

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